IP Library › Patent Application 14161255
Patent Application
App. No. 14/161,255

TANDEM SOLAR CELL

Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US None
App. No.
14/161,255
Abstract

This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising AlxGa(1-x)As and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction.

Claims (18)

1 . A method of manufacturing a solar cell device, comprising:

providing a substrate comprising Ge or GaAs;

forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising Al x Ga (1−x) As and having a lattice constant;

adding a material into the first alloy layer to change the lattice constant; and

forming a first p-n junction on the first tunnel junction.

2 . The method of claim 1 , wherein the first alloy layer has a p-type impurity.

3 . The method of claim I, wherein the first n-type layer or the first p-n junction comprises an element selected from the group consisting of Gallium, Aluminum, Indium, Arsenic, and Phosphorous.

4 . The method of claim 1 , further comprising a step of forming a second tunnel junction on the first p-n junction, wherein the second tunnel junction comprises a first element with an atomic number larger than that of Gallium.

5 . The method of claim 4 , wherein the first element has a concentration of 1˜2%.

6 . The method of claim 4 , wherein the second tunnel junction comprises a second alloy layer and a second n-type layer between the second alloy layer and the substrate.

7 . The method of claim 4 , further comprising:

forming a third tunnel junction on the second tunnel junction, wherein the third tunnel junction comprises a third alloy layer having a second element with an atomic number larger than that of Gallium; and

forming a second p-n junction on the third tunnel junction.

8 . The method of claim 7 , wherein the second element has a concentration between 3.5×10 21 and 1.7×10 22 (l/cm 3 ).

9 . The method of claim 1 , further comprising a step of forming a buffer layer between the first tunnel junction and the substrate.

10 . The method of claim 9 , wherein the buffer layer, the first tunnel junction, or the first p-n junction comprises an element selected from the group consisted of Gallium, Aluminum, Indium, Arsenic, and Phosphorous.

11 . The method of claim 1 , wherein the material added into the first alloy has a concentration between 1˜2%.

12 . The method of claim 1 , wherein the material is selected from the group consisting of Gallium, Aluminum, indium, Arsenic, and Phosphorous.