IP Library Granted Patent US 10,297,571
Granted Patent B2
US 10,297,571 · App. 14/162,062 · Granted May 21, 2019

Semiconductor package

Inventor: Isao Ozawa (Chigasaki, JP)
Assignee: TOSHIBA MEMORY CORPORATION
H01L25/03H01L23/3128H01L23/3135H01L23/49838H01L23/50H01L23/5226H01L25/18H01L2224/32145H01L2224/32225H01L2224/48091H01L2224/48145H01L2224/48147H01L2224/73265H01L2225/0651H01L2225/06506H01L2225/06562H01L2924/15311H01L2924/19105
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Quick Facts
Patent No.
US 10,297,571
App. No.
14/162,062
Granted
May 21, 2019
Kind
B2
Abstract

According to one embodiment, a semiconductor package includes a substrate with first and second pad, first semiconductor chip above the substrate, first wire, first mold member, second semiconductor chip above the first mold member, third semiconductor chip above the second semiconductor chip, second wire, and a second mold member. The first wire electrically connects the first pad and the first semiconductor chip. The first mold member seals the first wire and the first semiconductor chip. The second wire electrically connects the second pad and the second semiconductor chip. The second mold member seals the second wire, the second and the third semiconductor chips, and the first mold member.

Claims (87)

1. A semiconductor package comprising:

a substrate comprising a first pad group and a second pad group;

a first semiconductor chip above the substrate;

a second semiconductor chip above the substrate, the second semiconductor chip comprising a dynamic random access memory;

a first wire group configured to electrically connect the first pad group and the first semiconductor chip;

a first mold member configured to seal the first wire group, the first semiconductor chip, and the second semiconductor chip;

an electronic component above the substrate;

a third semiconductor chip above the first mold member;

a fourth semiconductor chip above the third semiconductor chip;

a second wire group configured to electrically connect the second pad group and the third semiconductor chip; and

a second mold member configured to seal the electronic component, the second wire group, the third semiconductor chip, the fourth semiconductor chip, and the first mold member; wherein:

the third semiconductor chip and the fourth semiconductor chip comprise a nonvolatile memory;

the first semiconductor chip comprises a controller of the nonvolatile memory;

the first semiconductor chip comprises four sides connected to the first wire group;

the four sides comprise at least a first side and a second side;

the first wire group comprises first wires and second wires;

the first wires are connected to the first side of the first semiconductor chip and transmit a signal between the substrate and the controller via high-speed interface standards;

the second wires are connected to the second side of the first semiconductor chip and extend in a same direction as the second wire group; and

the first wires and the second wire group are configured not to overlap each other when viewed from a top view.

2. The semiconductor package according to claim 1 , further comprising:

a third wire group configured to electrically connect the fourth semiconductor chip and a third pad group above the substrate, the third wire group being sealed in the second mold member.

3. The semiconductor package according to claim 1 , further comprising a fifth semiconductor chip above the fourth semiconductor chip, the fifth semiconductor chip sealed in the second mold member; and wherein:

an edge of the first semiconductor chip, an edge of the third semiconductor chip, an edge of the fourth semiconductor chip, and an edge of the fifth semiconductor chip are not aligned;

the edge of the third semiconductor chip is shifted from the edge of the first semiconductor chip in a third direction;

the edge of the fourth semiconductor chip is shifted from the edge of the third semiconductor chip in the third direction; and

the edge of the fifth semiconductor chip is shifted from the edge of the fourth semiconductor chip in the third direction.

4. The semiconductor package according to claim 1 , further comprising a fifth semiconductor chip above the fourth semiconductor chip, a sixth semiconductor chip above the fifth semiconductor chip; and wherein:

the fifth semiconductor chip and the sixth semiconductor chip are sealed in the second mold member;

an edge of the first semiconductor chip, an edge of the third semiconductor chip, an edge of the fourth semiconductor chip, an edge of the fifth semiconductor chip, and an edge of the sixth semiconductor chip are not aligned;

the edge of the third semiconductor chip is shifted from the edge of the first semiconductor chip in a third direction;

the edge of the fourth semiconductor chip is shifted from the edge of the third semiconductor chip in a fourth direction, the fourth direction opposing the third direction;

the edge of the fifth semiconductor chip is shifted from the edge of the fourth semiconductor chip in the third direction; and

the edge of the sixth semiconductor chip is shifted from the edge of the fifth semiconductor chip in the fourth direction.

5. The semiconductor package according to claim 1 , further comprising:

a first mold package comprising:

the first semiconductor chip above the substrate,

the second semiconductor chip,

the first wire group, and

the first mold member; and

a second mold package comprising:

the third semiconductor chip,

the fourth semiconductor chip,

the second wire group, and

the second mold member.

6. The semiconductor package according to claim 1 , wherein the high-speed interface standards comprises Serial Advanced Technology Attachment (SATA), Serial Attached Small computer system interface (SAS), or Peripheral Component Interconnect express (PCIe).

7. A semiconductor package comprising:

a substrate comprising a first pad group and a second pad group;

a first semiconductor chip above the substrate;

a first wire group configured to electrically connect the first pad group and the first semiconductor chip;

a first mold member configured to seal the first wire group and the first semiconductor chip;

a second semiconductor chip above the first mold member;

a second wire group configured to electrically connect the second pad group and the second semiconductor chip; and

a second mold member configured to seal the second wire group, the second semiconductor chip, and the first mold member; wherein:

the first semiconductor chip comprises four sides connected to the first wire group:

the four sides comprises at least a first side and a second side;

the first wire group comprises first wires and second wires:

the first wires are connected to the first side of the first semiconductor chip and transmit a signal between the substrate and the controller via high-speed interface standards;

the second wires are connected to the second side of the first semiconductor chip and extends in a same direction as the second wire group; and

the first wires and the second wire group are configured not to overlap each other when viewed from a top view.

8. The semiconductor package according to claim 7 , wherein:

the second semiconductor chip comprises a nonvolatile memory, and

the first semiconductor chip comprises a controller of the nonvolatile memory.

9. The semiconductor package according to claim 8 , further comprising:

a third semiconductor chip above the substrate; and

a third wire group configured to electrically connect the third semiconductor chip and a third pad group above the substrate; wherein:

the third semiconductor chip and the third wire group are sealed in the first mold member, and

the third semiconductor chip comprises a dynamic random access memory.

10. The semiconductor package according to claim 9 , further comprising an electronic component above the substrate, the electronic component being sealed in the second mold member.

11. The semiconductor package according to claim 8 , further comprising:

a sixth semiconductor chip above the substrate; and

a third wire group configured to electrically connect the sixth semiconductor chip and a third pad group above the substrate; wherein:

the sixth semiconductor chip and the third wire group are sealed in the second mold member, and

the sixth semiconductor chip comprises a dynamic random access memory.

12. The semiconductor package according to claim 11 , further comprising an electronic component above the substrate, the electronic component being sealed in the second mold member.

13. The semiconductor package according to claim 8 , further comprising:

a first mold package comprising:

the first semiconductor chip,

the first wire group, and

the first mold member; and

a second mold package comprising:

the second semiconductor chip,

the third semiconductor chip,

the fourth semiconductor chip,

the fifth semiconductor chip,

the second wire group, and

the second mold member.

14. The semiconductor package according to claim 7 , wherein the high-speed interface standards comprises Serial Advanced Technology Attachment (SATA), Serial Attached Small computer system interface (SAS), or Peripheral Component Interconnect express (PCIe).

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 22, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043620/0798 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 23, 2014
From: OZAWA, ISAO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 032030/0598 →
Continuity (2)
Provisional Application 61874540 · Sep 6, 2013
Related Publication 20150069632A1 · Mar 12, 2015
Cited By (1)
US 12,713,974