Light-emitting diode
This application discloses a light-emitting diode comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer formed above the first sub-layer, wherein the material of the second sub-layer comprises Al x Ga 1-x N (0<x<1) and the second sub-layer has a surface comprising a structure of irregularly distributed holes.
1. A light emitting device, comprising:
a first semiconductor layer;
an active layer on the first semiconductor layer;
a second semiconductor layer on the active layer, wherein the second semiconductor layer comprises a first sub-layer and a second sub-layer on the first sub-layer, wherein the second sub-layer comprises Al x Ga 1-x N (0<x<1) and the second sub-layer comprises a surface having a structure of irregularly distributed holes, wherein a conductivity of the second semiconductor layer is p-type; and
a semiconductor contact layer on the second semiconductor layer.
2. The light emitting device of claim 1 , wherein the first sub-layer comprises a first impurity concentration and the second sub-layer comprises a second impurity concentration, and
wherein the second impurity concentration is larger than the first impurity concentration.
3. The light emitting device of claim 2 , wherein the second semiconductor layer comprises a third sub-layer between the first sub-layer and the second sub-layer,
wherein the third sub-layer has a same conductivity with the second sub-layer, and the third sub-layer has a third impurity concentration between the first impurity concentration and the second impurity concentration.
4. The light emitting device of claim 3 , wherein a thickness of the third sub-layer is larger than that of the first sub-layer or the second sub-layer.
5. The light emitting device of claim 1 , further comprising a transparent conductive oxide layer on the semiconductor contact layer and an electrode layer on the transparent conductive oxidation layer.
6. The light emitting device of claim 2 , further comprising an electron blocking layer between the active layer and the second semiconductor layer, wherein a material of the electron blocking layer comprises Al z Ga 1-z N (0.15<z<0.4) and an impurity concentration of the electron blocking layer is higher than the second impurity concentration.
7. The light emitting device of claim 1 , wherein an energy bandgap of the semiconductor contact layer is lower than that of the second semiconductor layer.
8. The light emitting device of claim 1 , wherein the structure of irregularly distributed holes comprises hexagonal cavities and at least one of the hexagonal cavities extends to the second semiconductor layer, and the structure is formed by an epitaxial growth process.
9. The light emitting device of claim 1 , wherein the active layer emits a blue light having a main wavelength between 440˜470 nm.
10. The light emitting device of claim 1 , wherein the active layer emits an incoherent light.
11. A light emitting device, comprising:
a first semiconductor layer;
an active layer on the first semiconductor layer;
a second semiconductor layer on the active layer, wherein the second semiconductor layer comprises a first sub-layer and a second sub-layer on the first sub-layer, wherein the second sub-layer comprises Al x Ga 1-x N (0<x<1) and the second sub-layer comprises a surface having a structure of irregularly distributed holes; and
a semiconductor contact layer on the second semiconductor layer, wherein the structure of irregularly distributed holes comprises hexagonal cavities.
12. The light emitting device of claim 11 , wherein a conductivity of the second semiconductor layer is p-type.
13. The light emitting device of claim 11 , wherein the first sub-layer comprises a first impurity concentration and the second sub-layer comprises a second impurity concentration, wherein the second impurity concentration is larger than the first impurity concentration.
14. The light emitting device of claim 13 , wherein the second semiconductor layer comprises a third sub-layer between the first sub-layer and the second sub-layer, wherein the third sub-layer has a same conductivity with the second sub-layer, and the third sub-layer has a third impurity concentration between the first impurity concentration and the second impurity concentration.
15. The light emitting device of claim 14 , wherein a thickness of the third sub-layer is larger than that of the first sub-layer or the second sub-layer.
16. The light emitting device of claim 13 , further comprising an electron blocking layer between the active layer and the second semiconductor layer, wherein a material of the electron blocking layer comprises Al z Ga 1-z N (0.15<z<0.4) and an impurity concentration of the electron blocking layer is higher than the second impurity concentration.
17. The light emitting device of claim 11 , further comprising a transparent conductive oxide layer on the semiconductor contact layer and an electrode layer on the transparent conductive oxidation layer.
18. The light emitting device of claim 11 , wherein at least one of the hexagonal cavities extends to the second semiconductor layer, and the structure is formed while epitaxially forming the second sub-layer.