Display device and method of manufacturing the same
A display device includes a first substrate including a protrusion electrode pattern, a second substrate disposed opposite to the first substrate, and a liquid crystal layer disposed between the first substrate and the second substrate. The protrusion electrode pattern is made of a conductive polymer material, and a state of the liquid crystal layer changes from an isotropic state to an anisotropic state when an electric field is applied.
1. A method of manufacturing a display device, comprising:
forming a thin film transistor (TFT) comprising a first TFT and a second TFT on a substrate;
coating a conductive polymer layer on the substrate and the TFT; and
forming a protrusion electrode pattern comprising a first protrusion electrode connected to the first TFT and a second protrusion electrode connected to the second TFT and spaced apart from the first protrusion electrode by imprinting the conductive polymer layer,
wherein the first protrusion electrode and the second protrusion electrode have slit patterns that are alternately engaged with each other, and
the width of each of the first protrusion electrode and the second protrusion electrode is greater than or equal to a distance between the first protrusion electrode and the second protrusion electrode.
2. The method of claim 1 , wherein a mold in which a depression pattern corresponding to the protrusion electrode pattern is formed is used to imprint the conductive polymer layer.
3. The method of claim 1 , wherein forming the protrusion electrode pattern further comprises an etching process that removes a portion of the conductive polymer layer that is not part of the protrusion electrode pattern after imprinting.
4. The method of claim 1 , further comprising mixing a conductive particle with either an insulating polymer or a semiconducting polymer to form the conductive polymer layer.
5. The method of claim 1 , wherein the conductive polymer layer comprises either a chemically processed insulating polymer or a chemically processed semiconducting polymer.
6. The method of claim 1 , wherein:
each of the first protrusion electrode and the second protrusion electrode has a width in the range of 1 μm to 10 μm; and
the first protrusion electrode and the second protrusion electrode are disposed at a distance in the range of 1 μm to 10 μm from each other.
7. The method of claim 1 , wherein the protrusion electrode pattern has a height in the range of 1 μm to 6 μm.
8. The method of claim 1 , further comprising forming a color filter between the substrate and the protrusion electrode pattern.