Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals

1. An arrangement adapted to be coupled between a first RF terminal and a second RF terminal, the arrangement comprising:

a plurality of stacked switches coupled in series with one or more capacitors, the stacked switches proceeding from a first switch closest to the first RF terminal and farthest from the second RF terminal to an n-th switch farthest from the first RF terminal and closest to the second RF terminal, wherein

the one or more capacitors comprise a first set of one or more capacitors placed between the i-th and the (i+1)-th switch and a second set of one or more capacitors placed between the (n−i)-th and the (n−i+1)-th switch, i=1, 2, . . . .

2. The arrangement of claim 1 , wherein the one or more capacitors are metal-insulator-metal (MIM) capacitors or metal-metal (MM) capacitors.

3. The arrangement of claim 1 , further comprising a compensation capacitor stack, comprising (n−1) stacked compensation capacitors, the (n−1) stacked compensation capacitors being referred to as a first stacked compensation capacitor, a second stacked compensation capacitor, . . . , a j-th stacked compensation capacitor, . . . , to a (n−1)-th stacked compensation capacitor, proceeding in a direction from the first RF terminal to the second RF terminal,

wherein

the j-th stacked compensation capacitor is connected in parallel with the first stacked switch and the j-th stacked switch and all stacked switches in between, j being 1, 2, . . . , (n−1), and

the compensation capacitor stack is configured to reduce the effect of parasitic capacitances of the switch stack on the voltage across each stacked switch when the switch stack is off.

4. An arrangement adapted to be coupled between a first RF terminal and a second RF terminal, the arrangement comprising:

a plurality of 2N switches coupled in series with M capacitors, the switches proceeding from a first switch closest the first RF terminal and farthest from the second RF terminal to a 2N-th switch farthest from the first RF terminal and closest to the second RF terminal,

wherein

N represents an integer greater than or equal to two and M represents an integer greater than or equal to one,

the M capacitors are placed between the N-th switch and the (N+1)-th switch in a manner such that a first stack of N switches from among the plurality of 2N switches is connected in series between the first RF terminal and the M capacitors, the M capacitors are connected in series between the first stack of N switches and a second stack of N switches from among the plurality of 2N switches, and the second stack of N switches is connected in series between the M capacitors and the second RF terminal,

the first and the (2N)-th switches are equal in size and are the largest switches among the plurality of 2N switches.

5. The arrangement of claim 4 , wherein the j-th and the (2N−j+1)-th switches are equal in size, with switches decreasing in size as j increases, j being 2, 3, . . . N, switch sizes being configured to reduce the effect of parasitic capacitances of the switch stack on the voltage across each switch when the plurality of 2N switches is off.