Hydrothermal synthesis of bismuth germanium oxide
View Patent ↗A method for the hydrothermal synthesis of bismuth germanium oxide comprises dissolving a bismuth precursor (e.g., bismuth nitrate pentahydrate) and a germanium precursor (e.g., germanium dioxide) in water and heating the aqueous solution to an elevated reaction temperature for a length of time sufficient to produce the eulytite phase of bismuth germanium oxide (E-BGO) with high yield. The E-BGO produced can be used as a scintillator material. For example, the air stability and radioluminescence response suggest that the E-BGO can be employed for medical applications.
1. A method for the hydrothermal synthesis of bismuth germanium oxide, comprising;
dissolving a bismuth precursor and a germanium precursor in water to provide an aqueous solution, and
heating the aqueous solution in a sealed digestion bomb to a reaction temperature in the range of 150 to 200° C. for a length of time sufficient to produce an eulytite phase of bismuth germanium oxide.
2. The method of claim 1 , wherein the bismuth precursor comprises bismuth nitrate or bismuth acetate.
3. The method of claim 2 , wherein the bismuth nitrate comprises bismuth nitrate pentahydrate.
4. The method of claim 1 , wherein the germanium precursor comprises germanium dioxide.
5. The method of claim 1 , wherein an amount of germanium precursor in excess of the stoichiometric amount is dissolved in the aqueous solution.
6. The method of claim 5 , wherein the excess germanium precursor is removed from the bismuth germanium oxide produced by washing with water or by thermal treatment.
7. The method of claim 1 , wherein the reaction temperature is about 185° C.
8. The method of claim 7 , wherein the aqueous solution is heated to about 185° C. for a length of time greater than 12 hours.
9. The method of claim 1 , wherein the eulytite phase of bismuth germanium oxide is produced with a yield of greater than about 80%.
10. The method of claim 1 , further comprising thermal processing the bismuth germanium oxide produced to a temperature greater than 200° C. to remove trace impurities.
11. The method of claim 3 , wherein the concentration of bismuth nitrate pentahydrate in the aqueous solution is between 0.1 and 0.6 molar.
12. The method of claim 4 , wherein the concentration of germanium dioxide in the aqueous solution is between 0.1 and 0.5 molar.
13. The method of claim 1 , further comprising dissolving a dopant in the aqueous solution to shift the optical emission of the bismuth germanium oxide produced.
14. The method of claim 13 , wherein the dopant comprises a lanthanide dopant.
15. The method of claim 14 , wherein the lanthanide dopant comprises Er 3+ .