High temperature superconducting films and methods for modifying and creating same
Operational characteristics of an high temperature superconducting (“HTS”) film comprised of an HTS material may be improved by depositing a modifying material onto appropriate surfaces of the HTS film to create a modified HTS film. In some implementations of the invention, the HTS film may be in the form of a “c-film.” In some implementations of the invention, the HTS film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified HTS film has improved operational characteristics over the HTS film alone or without the modifying material. Such operational characteristics may include operating in a superconducting state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the HTS material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.
1. An HTS film comprising:
a first layer comprised of an HTS material, wherein the HTS material has a crystalline structure; and
a second layer comprised of a modifying material bonded to a face of the HTS material of the first layer, wherein the face of the HTS material is not substantially parallel to a c-plane of the crystalline structure of the HTS material,
wherein the HTS material bonded to the modifying material has an improved operational characteristic over the operational characteristics of the HTS material without the modifying material.
2. The HTS film of claim 1 , wherein the improved operational characteristic comprises a higher transition temperature.
3. The HTS film of claim 1 , further comprising a third layer comprised of a substrate material.
4. The HTS film of claim 3 , wherein the first layer is adjacent the substrate layer.
5. The HTS film of claim 3 , wherein the second layer is adjacent the substrate layer.
6. The HTS film of claim 1 , further comprising a buffer or an insulating layer.
7. The HTS film of claim 6 , wherein the first layer is adjacent the buffer or the insulating layer.
8. The HTS film of claim 6 , wherein the second layer is adjacent the buffer or the insulating layer.
9. The HTS film of claim 1 , further comprising a third layer of HTS material bonded to the second layer.
10. The HTS film of claim 1 , further comprising a third layer of modifying material bonded to the first layer.
11. The HTS film of claim 3 , wherein the substrate material comprises a polycrystalline material, a polycrystalline metal, an alloy, a Hastelloy metal, a Haynes metal, or an Inconel metal.
12. The HTS film of claim 1 , wherein the modifying material comprises chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, selenium, or other material.
13. The HTS film of claim 1 , wherein the HTS material comprises a mixed-valence copper-oxide perovskite.