Semiconductor device having an ESD protection circuit
View Patent ↗An ESD protection circuit having a smaller area is provided. The ESD protection circuit includes: a P-type diffusion resistor 12 whose one end is connected to an input terminal 11 formed in the N-type well; a diode 14 disposed between the diffusion resistor 12 and the N-type well connected to the power supply terminal; an NMOS transistor 15 whose drain is connected to the other end of the diffusion resistor 12 ; and a parasitic diode formed between the power supply terminal and the ground terminal.
1. A semiconductor device having an ESD protection circuit, comprising:
a P-type semiconductor substrate;
an N-type well disposed on the P-type semiconductor substrate;
a P-type diffusion resistor disposed in the N-type well;
a diode formed between the N-type well and the P-type diffusion resistor;
a first NMOS transistor and a second NMOS transistor disposed on the P-type semiconductor substrate;
a ground terminal disposed on the P-type semiconductor substrate; and
a power supply terminal disposed on the N-type well;
wherein one end of the P-type diffusion resistor is connected to an input terminal, and another end of the P-type diffusion resistor is connected to a drain of the first NMOS transistor and further connected to an internal circuit;
wherein a gate and a source of the first NMOS transistor are connected to the ground terminal; and
wherein a drain of the second NMOS transistor is connected to the power supply terminal, and a gate and a source of the second NMOS transistor are connected to the ground terminal.
2. A semiconductor device according to claim 1 , wherein:
electrons charged in the gate of the first NMOS transistor are pulled out from the input terminal through the second NMOS transistor and the diode.
3. A semiconductor device according to claim 1 , further comprising:
a resistor disposed between the diffusion resistor and the internal circuit, the resistor having one end connected to the other end of the diffusion resistor and having another end connected to the internal circuit.
4. A semiconductor device according to claim 1 , wherein:
the power supply terminal comprises an N-type diffusion region disposed only in the vicinity of the other end of the diffusion resistor.
5. A semiconductor device according to claim 1 , wherein:
the power supply terminal comprises an N-type diffusion region disposed around the diffusion resistor.
6. A semiconductor device according to claim 1 , wherein:
the internal circuit has a second input terminal, the second input terminal being a common gate electrode of an inverter circuit.
7. A semiconductor device having an ESD protection circuit, comprising:
a P-type semiconductor substrate;
an N-type well disposed on the P-type semiconductor substrate;
a P-type diffusion resistor disposed in the N-type well;
a first diode formed between the N-type well and the P-type diffusion resistor;
an NMOS transistor and a second diode disposed on the P-type semiconductor substrate;
a ground terminal disposed on the P-type semiconductor substrate; and
a power supply terminal disposed on the N-type well;
wherein one end of the P-type diffusion resistor is connected to an input terminal, and another end of the P-type diffusion resistor is connected to a drain of the NMOS transistor and further connected to an internal circuit;
wherein a gate and a source of the NMOS transistor are connected to the ground terminal; and
wherein a cathode of the second diode is connected to the power supply terminal, and an anode of the second diode is connected to the ground terminal.
8. A semiconductor device according to claim 7 , wherein:
electrons charged in the gate of the NMOS transistor are pulled out from the input terminal through the first diode and the second diode.
9. A semiconductor device according to claim 7 , wherein:
the internal circuit has a second input terminal, the second input terminal being a common gate electrode of an inverter circuit.