Detection circuit, semiconductor integrated circuit device, magnetic field rotation angle detection device, and electronic device
Detection of the rotation angle of a magnetic field using a magnetic sensor in which two sensor units are arranged at a predetermined angle with respect to each other is performed with a resolution of an angle smaller than 45° with a simple circuit configuration. A detection circuit is connectable to a magnetic sensor in which first and second sensor units are arranged at a predetermined angle with respect to each other, each sensor unit having a bridge circuit of magnetoresistance elements. The detection circuit includes a first comparison circuit that compares output signals of the first or second sensor unit, a second comparison circuit that compares an output signal of the first sensor unit with an output signal of second sensor unit, and a rotation angle calculation circuit that calculates a rotation angle of a magnetic field based on the comparison results of the first and second comparison circuits.
1. A detection circuit that is connectable to a magnetic sensor in which a first sensor unit and a second sensor unit are arranged at a predetermined angle with respect to each other, each sensor unit having a bridge circuit of magnetoresistance elements, the detection circuit comprising:
a first comparison circuit including:
a first comparator that compares a first output signal of the first sensor unit with a second output signal of the first sensor unit and outputs a first detection signal that indicates a first comparison result; and
a second comparator that compares a first output signal of the second sensor unit with a second output signal of the second sensor unit and outputs a second detection signal that indicates a second comparison result;
a second comparison circuit including:
a third comparator that compares the first output signal of the first sensor unit with the first output signal of the second sensor unit; and
a fourth comparator that compares the second output signal of the first sensor unit with the first output signal of the second sensor unit; and
a rotation angle calculation circuit that calculates a rotation angle of a magnetic field based on one of the comparison results of the first comparison circuit and a comparison result of the second comparison circuit, the rotation angle calculation circuit including a logic circuit that generates a third detection signal based on a comparison result of the third comparator and a comparison result of the fourth comparator.
2. A semiconductor integrated circuit device comprising the detection circuit according to claim 1 .
3. A magnetic field rotation angle detection device comprising:
the detection circuit according to claim 1 ; and
the magnetic sensor.
4. A detection circuit that is connectable to a magnetic sensor in which a first sensor unit and a second sensor unit are arranged at a predetermined angle with respect to each other, each sensor unit having a bridge circuit of magnetoresistance elements, the detection circuit comprising:
a first comparison circuit including a first comparator that compares two output signals of the first sensor unit and outputs a first detection signal that indicates a first comparison result;
a second comparison circuit including:
an amplification unit that amplifies an output signal of the first sensor unit by a predetermined amplification factor and outputs a first amplified signal and a second amplified signal, the amplified signals having the same amplitude and mutually different signs;
a second comparator that compares an output signal of the second sensor unit with the first amplified signal and outputs a second detection signal that indicates a second comparison result; and
a third comparator that compares the output signal of the second sensor unit with the second amplified signal and outputs a third detection signal that indicates a third comparison result; and
a rotation angle calculation circuit that calculates a rotation angle of a magnetic field based on the comparison result of the first comparison circuit and one of the comparison results of the second comparison circuit.
5. The detection circuit according to claim 4 , further comprising:
a voltage dividing circuit that generates a reference potential for use in the amplification unit by dividing a power supply voltage.
6. A semiconductor integrated circuit device comprising the detection circuit according to claim 5 .
7. A magnetic field rotation angle detection device comprising:
the detection circuit according to claim 5 ; and
the magnetic sensor.
8. A semiconductor integrated circuit device comprising the detection circuit according to claim 4 .
9. A magnetic field rotation angle detection device comprising:
the detection circuit according to claim 4 ; and
the magnetic sensor.
10. A detection circuit that is connectable to a magnetic sensor in which a first sensor unit and a second sensor unit are arranged at a predetermined angle with respect to each other, each sensor unit having a bridge circuit of magnetoresistance elements, the detection circuit comprising:
a first comparison circuit including a first comparator that compares two output signals of the first sensor unit and outputs a first detection signal that indicates a first comparison result;
a second comparison circuit including:
an amplification unit that amplifies one of the two output signals of the first sensor unit by a predetermined amplification factor and outputs an amplified signal;
a second comparator that compares a first output signal of the second sensor unit with the amplified signal and outputs a second detection signal that indicates a second comparison result; and
a third comparator that compares a second output signal of the second sensor unit with the amplified signal and outputs a third detection signal that indicates a third comparison result; and
a rotation angle calculation circuit that calculates a rotation angle of a magnetic field based on the comparison result of the first comparison circuit and one of the comparison results of the second comparison circuit.
11. The detection circuit according to claim 10 , further comprising:
a voltage dividing circuit that generates a reference potential for use in the amplification unit by dividing a power supply voltage.
12. A semiconductor integrated circuit device comprising the detection circuit according to claim 11 .
13. A magnetic field rotation angle detection device comprising:
the detection circuit according to claim 11 ; and
the magnetic sensor.
14. A semiconductor integrated circuit device comprising the detection circuit according to claim 10 .
15. A magnetic field rotation angle detection device comprising:
the detection circuit according to claim 10 ; and
the magnetic sensor.