Thermal processing method and thermal processing apparatus for heating substrate, and susceptor
A semiconductor wafer with (100) plane orientation has two orthogonal cleavage directions. A notch is provided so as to indicate one of these directions. During irradiation with a flash, the semiconductor wafer warps about one of two radii at an angle of 45 degrees with respect to the cleavage directions such that the upper surface thereof becomes convex, and the opposite ends of the other radii become the lowest position. Eight support pins in total are provided in upright position on the upper surface of a holding plate of a susceptor while being spaced at intervals of 45 degrees along the same circumference. The semiconductor wafer is placed on the susceptor such that any of the support pins supports a radius at an angle of 45 degrees with respect to a cleavage direction.
1. A thermal processing method that heats a substrate of a circular plate shape by irradiating the substrate with a flash, comprising the steps of:
(a) placing a substrate on a susceptor on which a plurality of support pins are provided in upright position and supporting a lower surface of said substrate with the support pins; and
(b) heating said substrate by irradiating an upper surface of said substrate on said susceptor with a flash from a flash lamp,
wherein said substrate is a monocrystalline silicon semiconductor wafer with (100) plane orientation, and
said substrate is placed on said susceptor in said step (a) such that said support pins support two radii of said substrate at an angle of 45 degrees with respect to a cleavage direction of said substrate, said cleavage direction being a direction of a line where a cleavage surface of a monocrystalline silicon ingot from which said substrate is cut out and said substrate cross each other.
2. A susceptor on which a substrate of a circular plate shape is placed, the substrate being heated by being irradiated with a flash from a flash lamp, said substrate being a monocrystalline silicon semiconductor wafer with (100) plane orientation, said susceptor comprising:
a plate of a flat shape; and
a plurality of support pins provided in upright position on an upper surface of said plate, the support pins supporting a lower surface of said substrate,
wherein said support pins are arranged at positions where said support pins support two radii of said substrate at an angle of 45 degrees with respect to a cleavage direction of said substrate, said cleavage direction being a direction of a line where a cleavage surface of a monocrystalline silicon ingot from which said substrate is cut out and said substrate cross each other.
3. The susceptor according to claim 2 , wherein at least four support pins are arranged on the upper surface of said plate while being spaced at intervals of 90 degrees.
4. The susceptor according to claim 3 , wherein eight support pins are arranged on the upper surface of said plate while being spaced at intervals of 45 degrees along said circumference.
5. The susceptor according to claim 3 , wherein 12 support pins are arranged on the upper surface of said plate while being spaced at intervals of 30 degrees along said circumference.
6. The susceptor according to claim 3 , wherein the diameter of said circumference is two-thirds or more of the diameter of said substrate.