Method for producing semiconductor device by plating processing

1. A method for producing a semiconductor device, comprising:

forming a base film above a semiconductor substrate;

forming a core above the base film;

forming a side wall film on a side face of the core;

replacing at least part of the side wall film with a metal film by performing plating processing; and

removing the core after the plating processing.

2. The method for producing a semiconductor device according to claim 1 , wherein the side wall film includes a silicon film.

3. The method for producing a semiconductor device according to claim 2 , wherein a portion of the silicon film remains after the plating processing.

4. The method for producing a semiconductor device according to claim 3 , further comprising:

converting the silicon film remaining after the plating processing into a metal silicide film by annealing the metal film.

5. The method for producing a semiconductor device according to claim 1 , wherein the plating processing includes immersing the semiconductor substrate in a displacement plating solution, and then immersing the semiconductor substrate in an electroless plating solution.

6. The method for producing a semiconductor device according to claim 5 , wherein the displacement plating solution includes a first metal and the electroless plating solution includes a second metal, the first metal acting as a catalyst for an electroless plating reaction of the second metal.

7. The method for producing a semiconductor device according to claim 6 , wherein the electroless plating solution includes a solvent, a metal ion of the second metal, a reducing agent, and a complexing agent.

8. A method for producing a semiconductor device, comprising:

forming a base film above a semiconductor substrate;

forming a pattern above the base film, the pattern comprising a plurality of core structures having a pitch with a length “a”;

forming a silicon film on a side wall of each of the core structures; and

plating each of the core structures to replace at least a portion of the silicon film with a metal film to form a wiring pattern.

9. The method for producing a semiconductor device according to claim 8 , wherein the wiring pattern includes a line width of approximately a/4.

10. The method for producing a semiconductor device according to claim 8 , further comprising:

removing a native oxide from the silicon film prior to the plating.

11. The method for producing a semiconductor device according to claim 8 , wherein a portion of the silicon film remains after the plating; and the method further comprises converting the silicon film remaining after the plating into a metal silicide film by annealing the metal film.

12. A method for producing a semiconductor device, comprising:

forming a base film above a semiconductor substrate;

forming a pattern above the base film including a plurality of core structures having a pitch “a”;

forming a silicon film on a side wall of each of the core structures; and

forming a wiring pattern having a pitch of a/2 by replacing at least a portion of the silicon film on the side wall of each of the core structures with a metal film.