Memory system and operating method thereof

1. A memory system comprising:

a semiconductor memory device configured to perform a read operation; and

a controller configured to control the read operation of the semiconductor memory device,

wherein the controller, by determining programmed states of memory cells located nearby selected memory cells, divides the selected memory cells into a plurality of groups depending on an amount of interference, and corrects data of one of the groups having a great amount of interference.

2. The memory system of claim 1 , wherein the semiconductor memory device comprises:

a memory cell array including a plurality of memory cells;

a periphery circuit unit configured to read data of the selected memory cells and data of the nearby memory cells, and transmit the read data to the controller; and

a control logic configured to control the periphery circuit unit to perform the read operation according to control of the controller.

3. The memory system of claim 1 , wherein the nearby memory cells include memory cells adjacent to the selected memory cells in a bit-line-to-bit-line direction and a memory cell that is adjacent to the selected memory cells in a word-line-to-word-line direction and is to be programmed next to the selected memory cells.

4. The memory system of claim 1 , wherein the semiconductor memory device, during the read operation, reads data of the selected memory cells by use of a read voltage and transmits the read data to the controller, and after changing the read voltage by an amount corresponding to a data correction region, reads again the data of the selected memory cells and transmits the re-read data to the controller.

5. The memory system of claim 1 , wherein the data correction region is a threshold voltage distribution in which two adjacent programmed states overlap.

6. The memory system of claim 4 , wherein the one of the groups having a great amount of interference includes the data correction region.

7. The memory system of claim 4 , wherein the correcting of the data of the one group having a great amount of interference represents inversing data of memory cells included in the data correction region among memory cells in the one group having a great amount of interference.

8. The memory system of claim 1 , wherein among an erased state, a first programmed state PV1, a second programmed state PV2, and a third programmed state PV3 of the nearby memory cells arranged by threshold voltage distributions, the selected memory cells have a great amount of interference at the first programmed state PV1 or the third programmed state PV3, and have a small amount of interference at the erased state and the second programmed state PV2.

9. The memory system of claim 4 , wherein the periphery circuit unit comprises:

a voltage generation unit configured to generate the read voltage; and

page buffers configured to read data of the nearby memory cells and transmit the read data to the controller,

wherein the voltage generation unit changes the read voltage to a value of the data correction region by raising and lowering the read voltage according to control of the control logic.

10. A memory system comprising:

a memory cell array including a plurality of memory cells;

a periphery circuit unit configured to read data stored in the plurality of memory cells; and

a controller configured to correct data read from selected memory cells based on data of nearby memory cells by inversing data of memory cells having a great amount of interference.

11. The memory system of claim 10 , wherein the controller divides the plurality of memory cells into a plurality of groups based on the data of the nearby memory cells.

12. The memory system of claim 11 , wherein the controller corrects data of one group determined to have a great amount of interference caused by the nearby memory cells among the plurality of groups.

13. The memory system of claim 10 , wherein the nearby memory cells include memory cells adjacent to the selected memory cells in a bit-line-to-bit-line direction and a memory cell that is adjacent to the selected memory cells in a word-line-to-word-line direction and is to be programmed next to the selected memory cells.

14. The memory system of claim 10 , wherein the periphery circuit unit reads data of the selected memory cells by use of a read voltage and transmits the read data to the controller, and after changing the read voltage by an amount corresponding to a data correction region, reads again the data of the selected memory cells and transmits the re-read data to the controller.

15. The memory system of claim 14 , wherein the data correction region is a threshold voltage distribution in which two adjacent programmed states overlap.

16. The memory system of claim 14 , wherein the one of the groups having a great amount of interference includes the data correction region.

17. The memory system of claim 14 , wherein the correcting of the data of the one group having a great amount of interference represents inversing data of memory cells included in the data correction region among memory cells in the one group having a great amount of interference.

18. A method of operating a memory system, the method comprising:

reading data of selected memory cells;

reading data of nearby memory cells adjacent to the selected memory cells;

dividing the selected memory cells into a plurality of groups based on the data of the nearby memory cells;

dividing memory cells included in a data correction region; and

correcting data read from memory cells included in the data correction region by inversing data of the memory cells included in the data correction region and determined to have a greatest amount of interference caused by the nearby memory cells.

19. The method of claim 18 , wherein the data correction region is a threshold voltage distribution in which two adjacent programmed states overlap.

20. The method of claim 18 , wherein data read from the selected memory cells that is corrected is recovered by use of an error correcting code.