Vertical topology light-emitting device
View Patent ↗A vertical topology light emitting device comprises a metal support structure; an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer; a metal layer on the adhesion structure, wherein the adhesion structure is thicker than the metal layer; a GaN-based semiconductor structure on the metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers; a multi-layered electrode structure on the GaN-based semiconductor structure; and a protective layer on a side surface and a top surface of the GaN-based semiconductor structure, wherein the protective layer is further disposed on the multi-layered electrode structure.
1. A light emitting device, comprising:
a metal support structure;
an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer;
a metal layer on the adhesion structure, wherein the adhesion structure is thicker than the metal layer;
a GaN-based semiconductor structure on the metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers;
a multi-layered electrode structure on the GaN-based semiconductor structure; and
a protective layer on a first side surface, a second side surface, and a top surface of the GaN-based semiconductor structure, wherein the protective layer is further disposed on the multi-layered electrode structure.
2. The device according to claim 1 , wherein the protective layer contacts the side surface of the GaN-based semiconductor structure.
3. The device according to claim 1 , wherein the protective layer contacts the top surface of the GaN-based semiconductor structure.
4. The device according to claim 1 , wherein the protective layer contacts a side surface of the multi-layered electrode structure.
5. The device according to claim 1 , wherein the protective layer contacts a top surface of the multi-layered electrode structure.
6. The device according to claim 1 , wherein the metal layer comprises Ti.
7. The device according to claim 6 , wherein the metal layer comprises a portion which directly contacts a p-type GaN layer of the GaN-based semiconductor structure.
8. The device according to claim 1 , wherein the metal support structure has a thickness less than 100 micrometers.
9. The device according to claim 1 , further comprising a transparent contact layer which contacts a p-type GaN layer of the GaN-based semiconductor structure.
10. The device according to claim 1 , further comprising a reflective metal contact which contacts a p-type GaN layer of the GaN-based semiconductor structure.
11. A light emitting device, comprising:
a metal support structure;
an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer;
a metal layer on the adhesion structure, wherein the adhesion structure is thicker than the metal layer;
a GaN-based semiconductor structure on the metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers;
a multi-layered electrode structure on the GaN-based semiconductor structure; and
a protective layer on a first side surface, a second side surface, and a top surface of the GaN-based semiconductor structure, wherein the protective layer entirely covers a first side surface, a second side surface, and a top surface of the multi-layered electrode structure.
12. The device according to claim 11 , wherein the metal layer comprises Ti.
13. The device according to claim 12 , wherein the metal layer comprises a portion which directly contacts a p-type GaN layer of the GaN-based semiconductor structure.
14. The device according to claim 11 , further comprising a transparent contact layer which contacts a p-type GaN layer of the GaN-based semiconductor structure.
15. The device according to claim 11 , further comprising a reflective metal contact which contacts a p-type GaN layer of the GaN-based semiconductor structure.
16. The device according to claim 11 , wherein the metal support structure has a thickness less than 100 micrometers.
17. The device according to claim 11 , wherein the protective layer surrounds the first side surface and the second side surface of the multi-layered electrode structure.
18. The device according to claim 11 , wherein the protective layer contacts the first side surface, the second side surface and the top surface of the multi-layered electrode structure.
19. The device according to claim 11 , wherein the protective layer contacts at least one of the first side surface, the second side surface and the top surface of the GaN-based semiconductor structure.
20. The device according to claim 11 , wherein the metal support structure comprises Cu.