Monolithically isled back contact back junction solar cells
According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles.
1. A method for making a back contact back junction solar cell, comprising:
forming emitter and base contact regions on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside;
forming a first level contact metallization on said wafer backside;
attaching an electrically insulating backplane to said semiconductor wafer backside;
forming isolation trenches in said semiconductor wafer, said isolation trenches partially partitioning said semiconductor wafer into a plurality of electrically isolated isles;
thinning said semiconductor wafer, said thinning completing said partitioning of said semiconductor wafer into a plurality of electrically isolated isles; and
forming a metallization structure on said electrically insulating backplane, said metallization structure electrically connecting said plurality of isles.
2. The method for forming a back contact back junction solar cell of claim 1 , further comprising forming a back surface field on said backside of said semiconductor wafer prior to forming emitter and base contact regions.
3. The method for forming a back contact back junction solar cell of claim 2 , wherein said back surface field is formed using a thermal doping deposition and drive-in process.
4. The method for forming a back contact back junction solar cell of claim 2 , wherein said back surface field is formed using a dopant ion implantation and thermal anneal.
5. The method for forming a back contact back junction solar cell of claim 1 , wherein said thinning of said semiconductor wafer is a wet etching process.
6. The method for forming a back contact back junction solar cell of claim 1 , wherein said thinning of said semiconductor wafer is a dry etching process.
7. The method for forming a back contact back junction solar cell of claim 1 , wherein said thinning of said semiconductor wafer is an abrasive mechanical process.
8. The method for forming a back contact back junction solar cell of claim 1 , wherein said thinning of said semiconductor wafer is a cleavage process utilizing laser splitting or ion implantation.
9. The method for forming a back contact back junction solar cell of claim 1 , wherein said isolation trenches are formed using a UV laser.
10. The method for forming a back contact back junction solar cell of claim 1 , wherein said isolation trenches are formed using an IR laser.
11. The method for forming a back contact back junction solar cell of claim 1 , wherein said isolation trenches are formed using a mechanical saw.
12. The method for forming a back contact back junction solar cell of claim 1 , further comprising forming a front surface field after thinning said semiconductor wafer.
13. The method for forming a back contact back junction solar cell of claim 12 , wherein said front surface field is formed using gas immersion laser doping.
14. The method for forming a back contact back junction solar cell of claim 12 , wherein said front surface field is formed using a dopant precursor deposited on the front side which is driven in using a laser.
15. A method for making a back contact back junction solar cell, comprising:
forming emitter and base contact regions on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside;
forming a first level contact metallization on said wafer backside;
attaching an electrically insulating backplane to said semiconductor wafer backside;
forming isolation trenches in said semiconductor wafer, said isolation trenches patterning said semiconductor wafer into a plurality of electrically isolated isles;
thinning said semiconductor wafer;
forming a front surface field after thinning said semiconductor wafer; and
forming a metallization structure on said electrically insulating backplane, said metallization structure electrically connecting said plurality of isles.
16. The method for forming a back contact back junction solar cell of claim 15 , wherein said front surface field is formed using gas immersion laser doping.
17. The method for forming a back contact back junction solar cell of claim 15 , wherein said front surface field is formed using a dopant precursor deposited on the front side which is driven in using a laser.
18. The method for forming a back contact back junction solar cell of claim 15 , wherein said step of forming isolation trenches in said semiconductor wafer completely partitions said semiconductor wafer into a plurality of electrically isolated isles.
19. The method for forming a back contact back junction solar cell of claim 15 , wherein said step of forming isolation trenches in said semiconductor wafer partially partitions said semiconductor wafer into a plurality of electrically isolated isles and said step of thinning said semiconductor wafer completes the partition and electrically isolates said plurality of isles.
20. The method for forming a back contact back junction solar cell of claim 15 , wherein said thinning of said semiconductor wafer is a wet etching process.
21. The method for forming a back contact back junction solar cell of claim 15 , wherein said thinning of said semiconductor wafer is a dry etching process.
22. The method for forming a back contact back junction solar cell of claim 15 , wherein said thinning of said semiconductor wafer is an abrasive mechanical process.
23. The method for forming a back contact back junction solar cell of claim 15 , wherein said thinning of said semiconductor wafer is a cleavage process utilizing laser splitting or ion implantation.
24. The method for forming a back contact back junction solar cell of claim 15 , wherein said isolation trenches are formed using a UV laser.
25. The method for forming a back contact back junction solar cell of claim 15 , wherein said isolation trenches are formed using an IR laser.
26. The method for forming a back contact back junction solar cell of claim 15 , wherein said isolation trenches are formed using a mechanical saw.
27. The method for forming a back contact back junction solar cell of claim 15 , further comprising forming a back surface field on said backside of said semiconductor wafer prior to forming emitter and base contact regions.
28. The method for forming a back contact back junction solar cell of claim 27 , wherein said back surface field is formed using a thermal doping deposition and drive-in process.
29. The method for forming a back contact back junction solar cell of claim 27 , wherein said back surface field is formed using a dopant ion implantation and thermal anneal.