Pattern forming method
View Patent ↗According to one embodiment, a pattern forming method includes, forming a first mask on a film to be processed, forming a guide that has a pattern including first openings and second openings, forming a second mask which covers the first openings and does not cover the second openings, etching the first mask using the second mask and the guide as a mask, removing the second mask, applying a self-assembling material into the first openings and the second openings, heating the self-assembling material to form a self-assembled pattern including a first polymer portion and a second polymer portion, etching the first polymer portion, etching the first mask using the second polymer portion and the guide as a mask, and processing the film to be processed using the first mask as a mask.
1. A pattern forming method comprising:
forming a first mask on a film to be processed;
forming a guide having a first pattern including first openings and second openings on the first mask;
forming a second mask which covers the first openings and not the second openings;
etching the first mask using the second mask and the guide as a mask;
removing the second mask;
introducing a material having a first segment and a second segment into the first openings and the second openings;
heating the material to form a second pattern including the first segment and the second segment through phase separation;
removing the first segment;
etching the first mask using the second segment and the guide as a mask; and
etching the film to be processed using the first mask as a mask.
2. The pattern forming method according to claim 1 , wherein the guide includes a cell region where a plurality of first recessed portions are formed and a peripheral circuit region where a plurality of second recessed portions are formed.
3. The pattern forming method according to claim 2 , wherein the plurality of first recessed portions have a substantially similar shape.
4. The pattern forming method according to claim 3 , wherein the plurality of second recessed portions includes a plurality of patterns which have a different shape.
5. The pattern forming method according to claim 1 , wherein the guide includes a lower layer film and an intermediate film of a three-layer mask material structure.
6. The pattern forming method according to claim 5 , wherein the guide includes a cell region where a plurality of first recessed portions are formed and a peripheral circuit region where a plurality of second recessed portions are formed.
7. The pattern forming method according to claim 6 , wherein the plurality of first recessed portions have a substantially similar shape.
8. The pattern forming method according to claim 7 , wherein the plurality of second recessed portions includes a plurality of patterns which have a different shape.
9. The pattern forming method according to claim 5 , wherein the guide includes a cell region where a plurality of first recessed portions are formed and a peripheral circuit region where a plurality of second recessed portions are formed.
10. The pattern forming method according to claim 9 , wherein the plurality of first recessed portions have a substantially similar shape.
11. The pattern forming method according to claim 10 , wherein the plurality of second recessed portions includes a plurality of patterns which have a different shape.
12. The pattern forming method according to claim 1 , wherein the guide is made of a resist material that is treated so as to be insoluble in an organic solvent.
13. A pattern forming method comprising:
forming a hard mask on a film to be processed;
forming a guide having a pattern including first recessed portions and second recessed portions;
forming a mask material which covers the first recessed portions and not the second recessed portions;
processing the hard mask using the mask material and the guide as a mask;
removing the mask material;
introducing a self-assembly material into the first recessed portions and the second recessed portions;
forming a self-assembled pattern including a first polymer portion and a second polymer portion by heating the self-assembly material;
removing the first polymer portion;
etching the hard mask using the second polymer portion and the guide as a mask; and
etching the film to be processed using the hard mask as a mask.
14. The pattern forming method according to claim 13 , wherein the guide includes a cell region where a plurality of first recessed portions are formed and a peripheral circuit region where a plurality of second recessed portions are formed.
15. The pattern forming method according to claim 14 , wherein the plurality of first recessed portions have a substantially similar shape and the plurality of second recessed portions includes a plurality of patterns which have a different shape.
16. The pattern forming method according to claim 13 , wherein the guide includes a lower layer film and an intermediate film of a three-layer mask material structure.
17. The pattern forming method according to claim 13 , wherein the guide is made of a resist material that is treated so as to be insoluble in an organic solvent.
18. The pattern forming method according to claim 13 , wherein the guide includes a cell region where a plurality of first recessed portions are formed and a peripheral circuit region where a plurality of second recessed portions are formed, and wherein the plurality of first recessed portions have a substantially similar shape, and the plurality of second recessed portions includes a plurality of patterns which have a different shape.