IP Library Granted Patent US 9,514,938
Granted Patent B2
US 9,514,938 · App. 14/181,303 · Granted Dec 6, 2016

Method of forming pattern

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Quick Facts
Patent No.
US 9,514,938
App. No.
14/181,303
Granted
Dec 6, 2016
Kind
B2
Abstract

According to one embodiment, a method of forming a pattern includes applying a polymer material having a first segment and a second segment in openings formed in a guide, heating the polymer material to achieve microphase separation of the polymer material to form a self-assembled pattern which includes a first polymer portion having a cylindrical shape which includes the first segment, and a second polymer portion including the second segment and surrounding a lateral portion of the first polymer portion, and selectively removing the first polymer portion. A molecular weight ratio of the first segment to the second segment in the polymer material is approximately 4:6.

Claims (94)

1. A method of forming a pattern, comprising:

forming a pattern having an opening on a film to be processed;

depositing a polymer material having a first polymer segment and a second polymer segment in the opening;

heating the polymer material to achieve microphase separation of the polymer material into a first polymer phase portion including the first polymer segment, and a second polymer phase portion including the second polymer segment, the first polymer phase portion including an upper portion having a rectangular plate shape with rounded corners and a plurality of lower portions each of which extends from the upper portion as a cylindrical shape, and the second polymer phase portion surrounding the first polymer phase portion; and

selectively removing the first polymer phase portion,

wherein molecular weights of the first polymer segment and the second polymer segment satisfy the following formula:

37/63≦(the molecular weight of the first polymer segment)/(the molecular weight of the second polymer segment)≦42/58.

2. The method according to claim 1 , wherein the pattern having the opening comprises a guide formed on the film to be processed, and

a plurality of hole patterns is formed in the guide by selective removal of the first polymer phase portion.

3. The method according to claim 2 , wherein the second polymer phase portion is not formed below the lower portions of the first polymer phase portion.

4. The method according to claim 1 , wherein the second polymer phase portion is not formed below the lower portions of the first polymer phase portion.

5. The method according to claim 1 , wherein the second polymer phase portion is not formed between the lower portions of the first polymer phase portion and the film to be processed.

6. The method according to claim 1 , wherein the opening has a rectangular plate shape with rounded corners.

7. A method of forming a pattern, comprising:

applying a polymer material containing a first segment and a second segment in an opening portion of a guide;

heating the polymer material to achieve microphase separation of the polymer material to form a self-assembled pattern including a first phase portion including the first segment and a second phase portion including the second segment, the first phase portion including an upper portion having a rectangular plate shape with rounded corners and a plurality of lower portions each of which extends from the upper portion as a cylindrical shape, and the second phase portion surrounding the first phase portion; and

selectively removing the first phase portion,

wherein molecular weights of the first segment and the second segment in the polymer material satisfy the following formula

35

65

Molecular

Weight

of

First

Segment

Molecular

Weight

of

Second

Segment

45

55

.

8. The method according to claim 7 , wherein the molecular weights of the first segment and the second segment in the polymer material satisfy the following formula

37

63

Molecular

Weight

of

First

Segment

Molecular

Weight

of

Second

Segment

42

58

.

9. The method according to claim 8 , wherein the guide is formed on a film to be processed, and

a plurality of hole patterns is formed on the film by selective removal of the first phase portion.

10. The method according to claim 9 , wherein the second phase portion is not formed below the lower portions of the first phase portion.

11. The method according to claim 7 , wherein the guide is formed on a film to be processed, and

a plurality of hole patterns is formed on the film by selective removal of the first phase portion.

12. The method according to claim 11 , wherein the second phase portion is not formed below the lower portions of the first phase portion.

13. The method according to claim 7 , wherein the second phase portion is not formed below the lower portions of the first phase portion.

14. The method according to claim 7 , wherein the second phase portion is not formed between the lower portions of the first phase portion and a film to be processed.

15. The method according to claim 7 , wherein the opening portion has a rectangular plate shape with rounded corners.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043194/0647 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 14, 2014
From: SATO, HIRONOBU
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 032223/0951 →