Gallium and nitrogen containing trilateral configuration for optical devices
View Patent ↗Techniques for manufacturing optical devices, such as light emitting diodes (LEDs) using a separation process of thick gallium and nitrogen containing substrate members, are described.
1. An optical device comprising a substrate structure, wherein the substrate structure comprises:
a first triangular facet characterized by a first planar surface;
a second triangular facet characterized by a second planar surface; and
three sidewalls connecting the first triangular facet and the second triangular facet, wherein,
each of the three sidewalls comprises a first portion coupled to the first triangular facet and a second portion coupled to the first portion and to the second triangular facet;
each of the first portions is oriented orthogonal to the first triangular facet; and
each of the second portions is oriented non-orthogonal to the first triangular facet.
2. The optical device of claim 1 , wherein the first triangular facet is substantially parallel to the second triangular facet.
3. The optical device of claim 1 , wherein the substrate structure comprises GaN.
4. The optical device of claim 1 , wherein,
the first triangular facet is characterized by a first area;
the second triangular facet is characterized by a second area; and
the first area is less than the second area.
5. The optical device of claim 1 , further comprising:
an n-type layer underlying the first triangular facet;
an active layer underlying the n-type layer;
a p-type layer underlying the active layer;
a first contact configured to form a first electrical connection with the p-type layer; and
a second contact configured to form a second electrical connection to the substrate structure.
6. The optical device of claim 1 , wherein the substrate structure is characterized by a Cex chip extraction efficiency of at least 50%.
7. The optical device of claim 1 , wherein,
the first portion is characterized by a first height h;
the second portion is characterized by a second height k;
a distance between the first triangular facet and the second triangular facet is equal to h+k; and
at least one of the second portions is characterized by a non-orthogonal angle Ψ relative to the first portion.
8. The optical device of claim 7 , wherein a ratio of the first height h and the second height k is about 1:2.
9. The optical device of claim 7 , wherein the first height h, the second height k, and the non-orthogonal angle Ψ are configured to provide a Cex chip extraction efficiency of at least 50%.
10. The optical device of claim 7 , wherein the first height h, the second height k, and the non-orthogonal angle Ψ are configured to provide an absorption of less than 10%.
11. The optical device of claim 7 , wherein the non-orthogonal angle Ψ is between about 10° to about 25°.
12. The optical device of claim 7 , wherein,
k is greater than 200 μm; and
the non-orthogonal angle Ψ is between about 10° to about 25°.
13. The optical device of claim 7 , wherein height h, the height k, and the non-orthogonal angle Ψ are selected to produce a maximum Cex chip extraction efficiency.
14. The optical device of claim 1 , wherein the optical device comprises a plurality of optical devices configured in an array pattern to cause a determined emission pattern in the array pattern.
15. A lamp comprising at least one optical device comprising a substrate structure, wherein the substrate structure comprises:
a first triangular facet characterized by a first planar surface;
a second triangular facet characterized by a second planar surface; and
three sidewalls connecting the first triangular facet and the second triangular facet, wherein,
each of the three sidewalls comprises a first portion coupled to the first triangular facet and a second portion coupled to the first portion and to the second triangular facet;
each of the first portions is oriented orthogonal to the first triangular facet; and
each of the second portions is oriented non-orthogonal to the first triangular facet.
16. The lamp of claim 15 , wherein the first triangular facet is substantially parallel to the second triangular facet.
17. The lamp of claim 15 , wherein the substrate structure comprises GaN.
18. The lamp of claim 15 , wherein,
the first triangular facet is characterized by a first area;
the second triangular facet is characterized by a second area; and
the first area is less than the second area.
19. The lamp of claim 15 , further comprising:
an n-type layer underlying the first triangular facet;
an active layer underlying the n-type layer;
a p-type layer underlying the active layer;
a first contact configured to form a first electrical connection with the p-type layer; and
a second contact configured to form a second electrical connection to the substrate structure.
20. The lamp of claim 15 , wherein the substrate structure is characterized by a Cex chip extraction efficiency of at least 50%.
21. The lamp of claim 15 , wherein,
the first portion is characterized by a first height h;
the second portion is characterized by a second height k;
a distance between the first triangular facet and the second triangular facet is equal to h+k; and
at least one of the second portions is characterized by a non-orthogonal angle Ψ relative to the first portion.
22. The lamp of claim 21 , wherein a ratio of the first height h and the second height k is about 1:2.
23. The lamp of claim 21 , wherein the first height h, the second height k, and the non-orthogonal angle Ψ are configured to provide a Cex chip extraction efficiency of at least 50%.
24. The lamp of claim 21 , wherein the first height h, the second height k, and the non-orthogonal angle Ψ are configured to provide an absorption of less than 10%.
25. The lamp of claim 21 , wherein the non-orthogonal angle Ψ is between about 10° to about 25°.
26. The lamp of claim 21 , wherein,
k is greater than 200 μm; and
the non-orthogonal angle Ψ is between about 10° to about 25°.
27. The lamp of claim 21 , wherein height h, the height k, and the non-orthogonal angle Ψ are selected to produce a maximum Cex chip extraction efficiency.
28. The lamp of claim 15 , wherein the at least one optical device comprises a plurality of optical devices configured in an array pattern to cause a determined emission pattern in the array pattern.