Semiconductor nanocrystals and methods
View Patent ↗In one embodiment, a method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and an aromatic solvent, introducing one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, reacting the precursors in the reaction mixture, without the addition of an acid compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals, and wherein an amide compound is formed in situ in the reaction mixture prior to isolating the coated semiconductor nanocrystals. In another embodiment, method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and a solvent, introducing an amide compound, one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, and reacting the precursors in the reaction mixture in the presence of the amide compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals. Semiconductor nanocrystals including coatings grown in accordance with the above methods are also disclosed.
1. A method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals, the method comprising:
providing a first mixture including semiconductor nanocrystals comprising a semiconductor material including a Group III-V compound and a solvent,
introducing a primary amide compound, one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, and
reacting the precursors in the reaction mixture, without the addition of an acid compound, in the presence of the primary amide compound, to grow the coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals.
2. A method in accordance with claim 1 wherein the primary amide compound is introduced after initiating introduction of the one or more cation precursors and one or more anion precursors.
3. A method in accordance with claim 1 wherein the solvent comprises a mixture of two or more solvents.
4. A method in accordance with claim 1 wherein an amine compound is further included in the reaction mixture during growth of the coating.
5. A method in accordance with claim 1 wherein an amine compound is further included in the reaction mixture before initiating introduction of the one or more cation precursors and one or more anion precursors.
6. A method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals, the method comprising:
providing a first mixture including semiconductor nanocrystals and an aromatic solvent,
introducing an amine compound and a primary amide compound, one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, and
reacting the precursors in the reaction mixture, without the addition of an acid compound, in the presence of the amine compound and the primary amide compound, to grow the coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals.