Co-fired hermetically sealed feedthrough with alumina substrate and platinum filled via for an active implantable medical device
View Patent ↗A co-fired hermetically sealed feedthrough is attachable to an active implantable medical device. The feedthrough comprises an alumina dielectric substrate comprising at least 96 or 99% alumina. A via hole is disposed through the alumina dielectric substrate from a body fluid side to a device side. A substantially closed pore, fritless and substantially pure platinum fill is disposed within the via hole forming a platinum filled via electrically conductive between the body fluid side and the device side. A hermetic seal is between the platinum fill and the alumina dielectric substrate, wherein the hermetic seal comprises a tortuous and mutually conformal interface between the alumina dielectric substrate and the platinum fill.
1. A method of manufacturing a hermetically sealed feedthrough, comprising the steps of:
a) forming a dielectric substrate comprising at least 96 percent alumina;
b) forming at least one via hole extending through the dielectric substrate;
c) filling the at least one via hole with a conductive fill, the conductive fill including a platinum powder and an inactive organic binder, solvent or plasticizer;
d) placing the dielectric substrate and conductive fill into an air filled heating chamber;
e) heating the dielectric substrate and conductive fill to a temperature of from about 400° C. to 700° C. and holding that temperature for a period of time that is sufficient for the inactive organic binder, solvent and plasticizer to be substantially baked out of the platinum fill;
f) heating the dielectric substrate and platinum fill to a temperature of about 1,400° C. to about 1,900° C. and holding that temperature for a period of time sufficient for the conductive fill to hermetically seal to the dielectric substrate forming a monolithic structure; and
g) cooling the heating chamber.
2. The method of claim 1 including forming a knitline between the platinum paste and the dielectric substrate comprising a glass that is at least about 60% silica.
3. The method of claim 1 including heating the dielectric substrate for a minimum of 4 hours.
4. The method of claim 1 including laminating a plurality of alumina sheets to form the dielectric substrate.
5. The method of claim 4 including forming a via hole through a thickness of each of the plurality of the alumina sheets and then aligning the respective via holes in registry with each other, thereby forming the dielectric substrate.
6. The method of claim 1 including pressing an alumina powder to form the dielectric substrate.
7. The method of claim 1 including laminating a plurality of alumina sheets to form the dielectric substrate.
8. The method of claim 1 including cooling the heating chamber by turning off the heating chamber and allowing the chamber to equalize to room temperature.
9. The method of claim 1 including cooling the heating chamber by at a rate of up to 5° C./min from the hold temperature cooled down to about 1,000° C.
10. The method of claim 9 including allowing the heating chamber to naturally equalize to room temperature starting at about 1,000° C.
11. The method of claim 1 including cooling the heating chamber at a rate of 1° C./min from the hold temperature to about 1,000° C. and then allowing the heating chamber to naturally equalize to room temperature.
12. The method of claim 1 wherein a resistance of the platinum fill from a first side of the dielectric substrate to a second side thereof is no greater than about 0.5 ohms.
13. The method of claim 1 wherein a resistance of the platinum fill from a first side of the dielectric substrate to a second side thereof is no greater than about 0.3 ohms.
14. The method of claim 1 wherein a resistance of the platinum fill from a first side of the dielectric substrate to a second side thereof is no greater than about 100 milliohms.
15. The method of claim 1 wherein a resistance of the platinum fill from a first side of the dielectric substrate to a second side thereof is no greater than about 10 milliohms.
16. The method of claim 1 wherein a resistance of the platinum fill from a first side of the dielectric substrate to a second side thereof is no greater than about 2 milliohms.