Solid electrolytic capacitor and method of manufacturing a solid electrolytic capacitor
View Patent ↗Provided is a method for forming a capacitor. The method includes: providing an anode with a dielectric thereon and a conductive node in electrical contact with the anode; applying a conductive seed layer on the dielectric; forming a conductive bridge between the conductive seed layer and the conductive node; applying voltage to the anode; electrochemically polymerizing a monomer thereby forming an electrically conducting polymer of monomer on the conductive seed layer; plating a metal layer on said conductive polymer; and disrupting the conductive bridge between the conductive seed layer and the conductive node.
1. A method for forming a capacitor comprising:
providing an anode;
forming a dielectric on said anode;
forming a conductive bridge between an external electrical connection and an active cathode region wherein said active cathode region is on said dielectric;
applying voltage to said external electrical connection;
electrochemically forming at least one cathode layer on said active cathode region; and
disrupting said conductive bridge between said external electrical connection and said active cathode region.
2. The method for forming a capacitor of claim 1 wherein said at least one cathode layer is a manganese dioxide layer.
3. The method for forming a capacitor of claim 1 wherein said at least one cathode layer is an intrinsically conducting polymer.
4. The method for forming a capacitor of claim 1 wherein said at least one cathode layer is a metal layer.
5. The method for forming a capacitor of claim 4 further comprising forming a carbon containing layer prior to forming said metal layer.
6. The method for forming a capacitor of claim 4 further comprising forming a carbon containing layer prior to forming said metal layer.
7. The method for forming a capacitor of claim 1 wherein said electrochemically forming at least one cathode layer comprises elecrolytically forming a metal layer on said cathode region.
8. The method for forming a capacitor of claim 7 wherein said elecrolytically forming of said metal layer comprises electroplating of metal through said conductive bridge.
9. The method for forming a capacitor of claim 8 wherein said metal layer comprises a metal selected from the group consisting of silver, nickel, copper and gold.
10. The method for forming a capacitor of claim 9 wherein said metal layer comprises a metal selected from the group consisting of silver and nickel.
11. The method for forming a capacitor of claim 1 wherein said electrochemically forming at least one cathode layer comprises elecrolytically forming a manganese dioxide layer on said cathode region.
12. The method for forming a capacitor of claim 1 wherein said active cathode region is at least partially covered by a conductive seed layer.
13. The method for forming a capacitor of claim 12 wherein said conductive seed layer comprises a material selected from manganese dioxide and a conductive polymer.
14. The method for forming a capacitor of claim 1 wherein said conductive bridge comprises a conductive seed layer.
15. The method for forming a capacitor of claim 1 further comprising:
forming an insulator on said dielectric.
16. The method for forming a capacitor of claim 15 wherein said conductive bridge extends over said insulator.
17. The method for forming a capacitor of claim 1 wherein said conductive bridge is electrically connected to a process carrier.
18. The method for forming a capacitor of claim 1 wherein said disrupting said conductive bridge comprises laser ablation.
19. The method for forming a capacitor of claim 1 wherein said conductive bridge comprises a material selected from manganese dioxide and conductive polymer.
20. The method for forming a capacitor of claim 1 wherein said disrupting said electrical conductivity comprises disrupting conductivity of said conductive bridge.
21. The method for forming a capacitor of claim 1 wherein said anode is selected from the group consisting of a valve metal and a conductive oxide of a valve metal.
22. The method for forming a capacitor of claim 21 wherein said anode is selected from the group consisting of aluminum, tantalum, niobium and NbO.