Semiconductor device structure, method for manufacturing the same and pixel structure using the same

1. A semiconductor device structure, comprising:

a substrate;

a first dielectric layer, disposed on the substrate, comprising a first patterned dielectric film and a second patterned dielectric film, wherein the second patterned dielectric film is disposed on the first patterned dielectric film, a Young's modulus of the first patterned dielectric film is between 1 GPa and 450 GPa, and a leakage current density of the first patterned dielectric film is smaller than 10 −7 A/cm 2 when an electric field strength is 1 MV/cm;

a second dielectric layer, disposed on the first dielectric layer, wherein a Young's modulus of the second dielectric layer is between 0.1 MPa and 80 GPa, and the Young's modulus of the second dielectric layer is smaller than the Young's modulus of the first patterned dielectric film;

a semiconductor layer, disposed on the first dielectric layer or the second dielectric layer;

a first conductive layer, disposed adjacently to the first dielectric layer or the second dielectric layer; and

a second conductive layer, disposed on the second dielectric layer, wherein the second conductive layer is electrically connected to at least one of the semiconductor layer and the first conductive layer via a contact hole penetrating the first dielectric layer or the second dielectric layer.

2. The semiconductor device structure according to claim 1 , wherein the semiconductor layer and the first conductive layer are separated via the first patterned dielectric film.

3. The semiconductor device structure according to claim 2 , wherein the first patterned dielectric film and the second patterned dielectric film are single-layer or multi-layer structures.

4. The semiconductor device structure according to claim 2 , wherein the second dielectric layer is a single-layer or multi-layer structure.

5. The semiconductor device structure according to claim 2 , wherein the first conductive layer is disposed under the semiconductor layer; the semiconductor layer, the first conductive layer, the second conductive layer and the first dielectric layer form a bottom-gate transistor; the semiconductor layer is an active layer of the bottom-gate transistor, and the first conductive layer is a gate electrode of the bottom-gate transistor.

6. The semiconductor device structure according to claim 2 , wherein the first conductive layer is disposed on the semiconductor layer; the semiconductor layer, the first conductive layer, the second conductive layer and the first dielectric layer form a top-gate transistor; the semiconductor layer has functions of an active layer, and the first conductive layer has functions of a gate electrode.

7. The semiconductor device structure according to claim 2 , wherein the semiconductor layer, the first conductive layer and the first dielectric layer form a capacitor.

8. The semiconductor device structure according to claim 7 , wherein the capacitor is formed by the first conductive layer, the semiconductor layer and the first patterned dielectric film of the first dielectric layer.

9. The semiconductor device structure according to claim 1 , wherein the first conductive layer and the second conductive layer are separated from each other via the second dielectric layer; the first conductive layer, the second conductive layer and the second dielectric layer form a capacitor.

10. The semiconductor device structure according to claim 1 , wherein the first conductive layer is disposed on the substrate, the second dielectric layer or the first dielectric layer has an opening revealing the first conductive layer, and the first conductive layer is electrically connected to the second conductive layer.

11. A semiconductor device structure, comprising:

a substrate;

a first dielectric layer, disposed on the substrate, comprising a first patterned dielectric film and a second patterned dielectric film, wherein the second patterned dielectric film is disposed on the first patterned dielectric film, a Young's modulus of the first patterned dielectric film is between 1 GPa and 450 GPa, and a leakage current density of the first patterned dielectric MV/cm; film is smaller than 10 −7 A/cm 2 when an electric field strength is 1

a second dielectric layer, disposed on the first dielectric layer, wherein a Young's modulus of the second dielectric layer is between0.1 MPa and 80 GPa, and the Young's modulus of the second dielectric layer is smaller than the Young's modulus of the first patterned dielectric film;

a first semiconductor layer, disposed on the substrate;

a first conductive layer, disposed on the first patterned dielectric film;

a second semiconductor layer, disposed on the second patterned dielectric film, wherein the first semiconductor layer and the first conductive layer are disposed at two opposite sides of the first patterned dielectric film, and the first conductive layer and the second semiconductor layer are disposed at two opposite sides of the second patterned dielectric film; and

a second conductive layer, disposed on the second dielectric layer, being electrically connected to the first semiconductor layer, the second semiconductor layer or the first conductive layer via a contact hole penetrating the first dielectric layer or the second dielectric layer.

12. The semiconductor device structure according to claim 11 , wherein the first semiconductor layer, the first conductive layer and the second conductive layer form a top-gate transistor; the first conductive layer, the second semiconductor layer and the second conductive layer form a bottom-gate transistor; the first conductive layer has functions of a gate layer, and the first semiconductor layer and the second semiconductor layer have functions of an active layer.

13. The semiconductor device structure according to claim 11 , wherein the first semiconductor layer, the first conductive layer and the first patterned dielectric film form a capacitor; the first conductive layer, the second semiconductor layer and the second patterned dielectric film form another capacitor.

14. The semiconductor device structure according to claim 13 , wherein the first semiconductor layer and the second semiconductor layer have the same potential.

15. The semiconductor device structure according to claim 11 , wherein the first dielectric layer is a multi-layer structure.

16. The semiconductor device structure according to claim 11 , wherein the second dielectric layer is a single-layer or multi-layer structure.

17. A pixel structure, comprising:

at least two pixel electrodes; and

a driving transistor, wherein the pixel electrodes are connected to an end electrode of the driving transistor; the driving transistor comprising:

a substrate;

a first dielectric layer, disposed on the substrate, comprising a first patterned dielectric film and a second patterned dielectric film, wherein the second patterned dielectric film is disposed on the first patterned dielectric film, a Young's modulus of the first patterned dielectric film is between 1 GPa and 450 GPa, and a leakage current density of the first patterned dielectric film is smaller than 10 −7 A/cm 2 when an electric field strength is 1 MV/cm;

a second dielectric layer, disposed on the first dielectric layer, wherein a Young's modulus of the second dielectric layer is between 0.1 MPa and 80 GPa, and the Young's modulus of the second dielectric layer is smaller than the Young's modulus of the first patterned dielectric film or the second patterned dielectric film;

a semiconductor layer, disposed adjacently to the first dielectric layer or the second dielectric layer;

a first conductive layer, disposed adjacently to the first dielectric layer or the second dielectric layer, wherein the semiconductor layer and the first conductive layer are disposed at two opposite sides of the first patterned dielectric film; and

a second conductive layer, disposed on the second dielectric layer, electrically connected to the semiconductor layer or the first conductive layer via a contact hole penetrating the first dielectric layer or the second dielectric layer;

wherein, the driving transistor drives the pixel electrodes to generate a pixel.

18. The pixel structure according to claim 17 , wherein the second dielectric layer is a single-layer or multi-layer structure.

19. A pixel structure, comprising:

at least two pixel electrodes; and

a driving transistor, wherein the pixel electrodes are connected to an end electrode of the driving transistor; the driving transistor comprising:

a substrate;

a semiconductor layer, disposed on the substrate;

a dielectric layer, disposed on the semiconductor layer, comprising a first patterned dielectric film and a second patterned dielectric film wherein the second patterned dielectric film is disposed on the first patterned dielectric film, a Young's modulus of the first patterned dielectric film is between 1 GPa and 450 GPa, and a leakage current density of the first patterned dielectric film is smaller than 10 −7 A/cm 2 when an electric field strength is 1 MV/cm;

a first conductive layer, wherein the first conductive layer and the semiconductor layer are disposed at two opposite sides of the dielectric layer; and

a second conductive layer, disposed on the dielectric layer, electrically connected to the semiconductor layer or the first conductive layer via a contact hole penetrating the first dielectric layer or the second dielectric layer;

wherein, the driving transistor drives the pixel electrodes to generate a pixel.