Light emitting device and methods for forming the same
View Patent ↗The present invention provides a light emitting device, which comprises an epitaxial stack structure, a II/V group compound contact layer directly formed on the epitaxial stack structure, a protrusion or recess type structure directly formed on the II/V group compound contact layer, and a conductive layer covering the protrusion or recess type structure.
1. A light-emitting device, comprising:
an epitaxial stack structure;
a II/V group compound contact layer directly formed on the epitaxial stack structure;
a protrusion or recess type structure directly formed on the II/V group compound contact layer; and
a conductive layer covering the protrusion or recess type structure.
2. The light-emitting device of claim 1 , wherein the II/V group compound contact layer comprises Mg x N y .
3. The light-emitting device of claim 1 , wherein the conductive layer comprises a material selected from the group consisted of ITO, ZnO Ni/Au alloy, CTO, TiWN, In 2 O 3 , SnO 2 , CdO, ZnO, CuGaO 2 , and SrCu 2 O 2 .
4. The light-emitting device of claim 1 , further comprising:
a nucleus layer formed between the II/V group compound contact layer and the protrusion or recess type structure.
5. The light emitting device of claim 4 , wherein the nucleus layer comprises nitride.
6. The light-emitting device of claim 4 , wherein the nucleus layer and the protrusion or recess type structure comprise an identical material.
7. The light-emitting device of claim 1 , wherein the conductive layer is transparent to light from the epitaxial stack structure.
8. The light-emitting device of claim 1 , further comprising a transparent substrate connected to the epitaxial stack structure.