Semiconductor die with high pressure cavity
A semiconductor die includes a device structure having a micro-electronic device located at a surface of a substrate and a cap coupled to the device structure with the micro-electronic device positioned in a cavity located between the cap and the substrate. A sacrificial material is provided within the cavity, coupling the cap to the device structure. The sacrificial material is heated in the cavity to cause the sacrificial material to decompose to a gaseous species. The presence of the gaseous species in the cavity increases a pressure level in the cavity from an initial pressure to a final pressure.
1. A method of fabricating a semiconductor die that includes a device structure and a cap defining a hermetically sealed cavity, the device structure having a micro-electronic device located at a surface of a substrate, the method comprising:
providing a sacrificial material within the cavity, wherein the sacrificial material comprises a thermoplastic polymer;
coupling the cap to the device structure with the micro-electronic device positioned in the cavity; and
heating the sacrificial material in the cavity to cause the sacrificial material to decompose to a gaseous species to increase a pressure in the cavity from a first pressure level to a second pressure level,
wherein heating the sacrificial material is performed at a temperature sufficient to entirely decompose the sacrificial material to the gaseous species.
2. The method of claim 1 , wherein coupling the cap to the device structure and heating the sacrificial material are performed concurrently.
3. The method of claim 1 , wherein coupling the cap to the device structure and heating the sacrificial material are performed using eutectic bonding.
4. The method of claim 1 , wherein coupling the cap to the device structure and heating the sacrificial material are performed using thermocompression bonding.
5. The method of claim 1 , wherein heating the sacrificial material is performed after coupling the cap to the device structure.
6. The method of claim 1 , wherein heating the sacrificial material comprises performing an annealing process after coupling the cap to the device structure, wherein the annealing process heats the sacrificial material.
7. The method of claim 1 , wherein the micro-electronic device is a first micro-electronic device, the cavity is a first cavity, a second micro-electronic device is located at the surface of the substrate, the second micro-electronic device being laterally displaced from the first micro-electronic device, the cap and the surface define a second cavity, the method further comprising:
abstaining from providing the sacrificial material in the second cavity;
the coupling couples the cap to the device structure with the second micro-electronic device positioned in the second cavity, the pressure in each of the first and second cavities being at the first pressure level preceding the heating operation; and
the heating the sacrificial material decomposes the sacrificial material in the first cavity to increase the pressure in the first cavity to the second pressure level without changing the pressure in the second cavity from the first pressure level.
8. The method of claim 7 , wherein coupling the cap to the device structure is performed in a vacuum environment such that the first pressure level in each of the first and second cavities before the heating operations is less than standard atmospheric pressure.
9. A semiconductor die, comprising:
a device structure having a microelectronic device located at a surface of a substrate;
a cap coupled to the device structure with the microelectronic device positioned in a hermetically sealed cavity located between the cap and the substrate; and
a gaseous species of a sacrificial material located within the cavity, wherein the sacrificial material is entirely decomposed to produce the gaseous species and thereby increase a pressure in the cavity from a first pressure level to a second pressure level, and wherein the sacrificial material comprised a thermoplastic polymer.
10. The semiconductor die of claim 9 , wherein the sacrificial material is provided within the cavity prior to the cap being coupled to the device structure, and the sacrificial material is heated when the cap is coupled to the device structure to cause the sacrificial material to entirely decompose to the gaseous species.
11. The semiconductor die of claim 9 , wherein the microelectronic device is a first microelectronic device, the cavity is a first cavity, the device structure further comprises a second microelectronic device located at the surface of the substrate and laterally displaced away from the first microelectronic device, the second microelectronic device being positioned in a second cavity defined by the cap and the substrate, wherein the gaseous species of the sacrificial material is absent from the second cavity and the pressure in the second cavity is at the first pressure level.
12. The semiconductor die of claim 11 , wherein the first pressure level is less than standard atmospheric pressure, and the second pressure level is greater than the standard atmospheric pressure.