Bulk acoustic wave resonators having doped piezoelectric material and frame elements
A bulk acoustic wave (BAW) resonator includes a first electrode; a second electrode; and a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer includes a piezoelectric material doped with at least one rare earth element. In an embodiment, the BAW resonator includes a recessed frame element disposed over a surface of at least one of the first and second electrodes. In another embodiment, the BAW resonator includes a raised frame element disposed over a surface of at least one of the first and second electrodes. In yet another embodiment, the BAW resonator includes both the raised and recessed frame elements.
1. A bulk acoustic wave (BAW) resonator comprising:
a first electrode;
a second electrode;
a piezoelectric layer disposed between the first and second electrodes, the piezoelectric layer comprising a piezoelectric material doped with two or more rare earth elements incorporated into a crystal lattice of the piezoelectric material; and
a recessed frame element disposed over a surface of at least one of the first and second electrodes.
2. A BAW resonator as claimed in claim 1 , wherein the recessed frame element is disposed along a periphery of the second electrode.
3. A BAW resonator as claimed in claim 1 , wherein the recessed frame element is disposed within the first electrode and directly opposes a periphery of the second electrode.
4. A BAW resonator as claimed in claim 1 , wherein the recessed frame element is integrated into the one of the first and second electrodes.
5. A BAW resonator as claimed in claim 1 , further comprising a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer, wherein an overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer defines an active area of the BAW resonator.
6. A BAW resonator as claimed in claim 5 , wherein the reflective element comprises a cavity disposed in a substrate over which the first electrode, the second electrode and the piezoelectric layer are disposed.
7. A BAW resonator as claimed in claim 5 , wherein the reflective element comprises a plurality of layers having alternating high acoustic impedance and low acoustic impedance.
8. A BAW resonator as claimed in claim 1 , wherein the piezoelectric material comprises aluminum nitride (AlN).
9. A BAW resonator as claimed in claim 8 , wherein the two or more rare earth elements comprise scandium (Sc).
10. A BAW resonator as claimed in claim 1 , wherein the two or more rare earth elements comprise scandium (Sc) and erbium (Er).
11. A BAW resonator as claimed in claim 10 , wherein the two or more rare earth elements further comprise yttrium (Y).
12. A BAW resonator as claimed in claim 1 , further comprising a raised frame element disposed over a surface of at least one of the first and second electrodes.
13. A BAW resonator as claimed in claim 12 , wherein the piezoelectric material comprises aluminum nitride (AlN).
14. A BAW resonator as claimed in claim 13 , wherein the two or more rare earth elements comprise scandium (Sc).
15. A BAW resonator as claimed in claim 13 , wherein the two or more rare earth elements comprise scandium (Sc) and erbium (Er).
16. A BAW resonator as claimed in claim 15 , wherein the two or more rare earth elements comprise yttrium (Y).
17. A bulk acoustic wave (BAW) resonator comprising:
a first electrode;
a second electrode;
a piezoelectric layer disposed between the first and second electrodes, the piezoelectric layer comprising a piezoelectric material doped with two or more rare earth elements incorporated into a crystal lattice of the piezoelectric material; and
a raised frame element disposed over a surface of at least one of the first and second electrodes.
18. A BAW resonator as claimed in claim 17 , wherein the raised frame element is disposed along a periphery of the second electrode.
19. A BAW resonator as claimed in claim 17 , wherein the raised frame element is disposed within the first electrode and directly opposes a periphery of the second electrode.
20. A BAW resonator as claimed in claim 17 , wherein the raised frame element is integrated into the one of the first and the second electrodes.
21. A BAW resonator as claimed in claim 17 , further comprising a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer, wherein an overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer defines an active area of the BAW resonator.
22. A BAW resonator as claimed in claim 21 , wherein the reflective element comprises a cavity disposed in a substrate over which the first electrode, the second electrode and the piezoelectric layer are disposed.
23. A BAW resonator as claimed in claim 21 , wherein the reflective element comprises a plurality of layers having alternating high acoustic impedance and low acoustic impedance.
24. A BAW resonator as claimed in claim 17 , wherein the piezoelectric material comprises aluminum nitride (AlN).
25. A BAW resonator as claimed in claim 24 , wherein the two or more rare earth elements comprise scandium (Sc).
26. A BAW resonator as claimed in claim 17 , wherein the two or more rare earth elements comprise scandium (Sc) and erbium (Er).
27. A BAW resonator as claimed in claim 26 , wherein the two or more rare earth elements further comprise yttrium (Y).