Miniature sensor structures for ion mobility spectrometers
View Patent ↗For ion mobility spectrometry applications, a desired shape of a sensor structure may be created by forming a desired shape from a ceramic material, such as aluminum nitride. In various embodiments, the sensor structure may be formed using discrete individual ceramic sheets and/or from a preformed ceramic tube. Via holes are formed into the sensor structure to provide for efficient circuitry configurations of the IMS drift tube and/or providing electrical connections between the interior and exterior of the drift tube.
1. A method for making a substantially cylindrical sensor structure, comprising:
forming a substantially cylindrically shaped structure made of a high temperature, non-electrically-conductive ceramic material, by applying at least two discrete sheets of the high temperature, non-electrically-conductive ceramic material as overlaying layers about a cylindrical mandrel to form the shaped structure;
forming at least one via hole in each of the at least two discrete sheets;
forming circuitry features on each of the at least two discrete sheets, wherein the at least one via hole and the circuitry features are formed in each of the at least two discrete sheets before applying the at least two discreet sheets as overlaying layers to form the shaped structure; and
processing the shaped structure to obtain the substantially cylindrical sensor structure;
wherein the ceramic material is aluminum nitride or alumina.
2. The method according to claim 1 , wherein the sensor structure is an ion mobility spectrometry drift tube.
3. The method according to claim 1 , wherein the at least one via hole formed in each of the at least two discrete sheets together are disposed to provide a via hole that connects an interior and an exterior of the shaped structure.
4. The method according to claim 1 , wherein forming the circuitry features includes forming conductive or resistive features on the at least two discrete sheets using an ink deposition process.
5. The method according to claim 1 , wherein the at least one via hole in each of the at least two discrete overlaying layers is formed to electrically connect the circuitry features of at least one adjacent layer independently of whether a through-via hole is formed from an interior to an exterior of the shaped structure.
6. The method according to claim 1 , wherein the shaped structure includes at least three discrete overlaying layers, and wherein the at least one via hole formed in at least one middle layer of the at least three discrete overlaying layers is formed to electrically connect the circuitry features of layers adjacent to the at least one middle layer independently of whether a through-via hole is formed from an interior to an exterior of the shaped structure.
7. A cylindrical sensor structure, comprising:
a substantially cylindrical shaped structure made of a high temperature, non-electrically-conductive ceramic material, having at least two discrete sheets of the high temperature, non-electrically-conductive ceramic material applied as overlaying layers of the shaped structure;
circuitry features formed on each of the at least two discrete sheets of the shaped structure; and
at least one via hole formed in each of the at least two discrete sheets of the shaped structure, wherein the at least one via hole in each of the at least two discrete sheets electrically connects the circuitry features of at least one adjacent layer independently of whether a through-via hole is formed from an interior to an exterior of the shaped structure;
wherein the ceramic material is aluminum nitride or alumina.
8. The sensor structure according to claim 7 , wherein the sensor structure is an ion mobility spectrometry drift tube.
9. The sensor structure according to claim 7 , wherein the at least one via hole formed in each of the at least two discrete sheets together are disposed to provide a via hole that connects an interior and an exterior of the shaped structure.
10. The sensor structure according to claim 7 , wherein the circuitry features are formed by deposited conductive or resistive features that are deposited on the at least two discrete sheets using an ink deposition process.
11. The sensor structure according to claim 7 , wherein the shaped structure includes at least three discrete overlaying layers, and wherein the at least one via hole formed in at least one middle layer of the at least three discrete overlaying layers is formed to electrically connect the circuitry features of layers adjacent to the at least one middle layer independently of whether a through-via hole is formed from an interior to an exterior of the shaped structure.
12. An ion mobility spectrometer device, comprising:
an ion source;
an analyzer component; and
a drift tube coupled between the ion source and the analyzer component, wherein the drift tube includes:
a substantially cylindrical shaped structure made of a high temperature, non-electrically-conductive ceramic material having at least two discrete sheets of the high temperature, non-electrically-conductive ceramic material applied as overlaying layers of the shaped structure;
circuitry features formed on each of the at least two discrete sheets of the shaped structure; and
at least one via hole formed in each of the at least two discrete sheets of the shaped structure, wherein the at least one via hole in each of the at least two discrete sheets electrically connects the circuitry features of at least one adjacent layer independently of whether a through-via hole is formed from an interior to an exterior of the shaped structure;
wherein the ceramic material is aluminum nitride or alumina.
13. The ion mobility spectrometer device according to claim 12 , wherein the at least one via hole formed in each of the at least two discrete sheets together are disposed to provide a via hole that connects an interior and an exterior of the shaped structure.
14. The ion mobility spectrometer device according to claim 12 , wherein the circuitry features are formed by deposited conductive or resistive features that are deposited on the at least two discrete sheets using an ink deposition process.
15. The ion mobility spectrometer device according to claim 12 , wherein the shaped structure includes at least three discrete overlaying layers, and wherein the at least one via hole formed in at least one middle layer of the at least three discrete overlaying layers is formed to electrically connect the circuitry features of layers adjacent to the at least one middle layer independently of whether a through-via hole is formed from an interior to an exterior of the shaped structure.