Pattern forming method and mask pattern data
According to one embodiment, a pattern forming method includes: forming a guide layer, including a base layer and a neutralization film with a plurality of parallel line sections, on a processing target film, forming a polymer material containing first polymer segments and second polymer segments, on the guide layer, forming a self-assembly pattern having a plurality of first polymer portions containing the first polymer segment and extending in a direction of the line sections, and a plurality of second polymer portions containing the second polymer segment alternating with the first polymer portions and extending along the direction of the line sections, and selectively removing the second polymer portions. The widths of line sections of both ends of the plurality of line sections of the neutralization film are about two times the width of each first polymer portion or each second polymer portion.
1. A pattern forming method, comprising:
forming a guide layer, including a base layer and a neutralization film with a plurality of parallel line sections, on a target film to form a mask substrate;
applying a polymer material on the guide layer, the polymer material containing a first polymer segment and a second polymer segment;
forming a self-assembly pattern from the polymer material, the self-assembly pattern having a plurality of first polymer portions containing the first polymer segment and extending in a direction of the line sections, and a plurality of second polymer portions containing the second polymer segment alternating with the first polymer portions and extending along the direction of the line sections, wherein the second polymer portions include one that is located at a first outer periphery of the pattern and another that is located at a second outer periphery of the pattern; and
removing the second polymer portions,
wherein the widths of line sections at ends of the plurality of line sections of the neutralization film are about two times the width of each first polymer portion or each second polymer portion in a direction perpendicular to the line sections, and the neutralization film is neutral with respect to the first polymer segment and the second polymer segment.
2. The pattern forming method according to claim 1 , wherein
an interval between neighboring line sections is an odd multiple of the width of each first polymer portion or each second polymer portion.
3. The pattern forming method according to claim 2 , wherein
the widths of each of the plurality of line sections in a central area of the neutralization film are about three times the width of each first polymer portion or each second polymer portion.
4. The pattern forming method according to claim 2 , further comprising:
forming a resist film to cover the self-assembly pattern leaving a portion of the mask substrate exposed; and
etching the mask substrate using the resist film as a mask to remove a mixed polymer outside of the self-assembly pattern.
5. The pattern forming method according to claim 4 , wherein the opposed ends of the mask substrate in the direction perpendicular to the line sections include a single first polymer portion adjacent to a central area of the mask substrate, and a single second polymer portion positioned outside of the first polymer portion.
6. The pattern forming method according to claim 2 , further comprising;
forming a resist pattern corresponding to the plurality of line sections on the neutralization film, and
etching the mask substrate using the resist pattern as a mask to transfer a pattern of the plurality of line sections onto the neutralization film.
7. The pattern forming method according to claim 1 , wherein
the widths of each of the plurality of line sections in a central area of the neutralization film are about three times the width of each first polymer portion or each second polymer portion.
8. The pattern forming method according to claim 7 , further comprising:
forming a resist film to cover the self-assembly pattern leaving a portion of the mask substrate exposed; and
etching the mask substrate using the resist film as a mask to remove a mixed polymer outside of the self-assembly pattern.
9. The pattern forming method according to claim 8 , further comprising;
forming a resist pattern corresponding to the plurality of line sections on the neutralization film, and
etching the mask substrate using the resist pattern as a mask to transfer a pattern of the plurality of line sections onto the neutralization film.
10. The pattern forming method according to claim 1 , wherein
removing the second polymer portions includes removing the second polymer portions at opposing ends of the line sections in the direction perpendicular to the line sections.
11. The pattern forming method according to claim 1 , wherein
the guide layer is hydrophilic and the first polymer portion is a polystyrene and the second polymer portion is polymethylmethacrylate.
12. The pattern forming method according to claim 1 , wherein
the guide layer is hydrophobic and the first polymer portion is a polymethylmethacrylate and the second polymer portion is polystyrene.
13. A pattern forming method, comprising:
forming a mask substrate comprising a guide layer on a target film, the guide layer including a base layer and a neutralization film with a plurality of parallel line sections;
applying a polymer material on the guide layer, the polymer material containing a first polymer segment and a second polymer segment;
heating the polymer material to microphase separate the polymer material forming a self-assembly pattern having a plurality of first polymer portions containing the first polymer segment and extending in a direction of the line sections, and a plurality of second polymer portions containing the second polymer segment alternating with the first polymer portions and extending along the direction of the line sections; and
forming a resist film to cover the self-assembly pattern leaving sides of the self-assembly pattern exposed;
etching the self-assembly pattern using the resist film as a mask to remove the sides of the self-assembly pattern;
wherein:
the widths of line sections at ends of the plurality of line sections of the neutralization film are about two times the width of each first polymer portion or each second polymer portion in a direction perpendicular to the line sections,
the neutralization film is neutral with respect to the first polymer segment and the second polymer segment, and
an interval between neighboring line sections is an odd multiple of the width of each first polymer portion or each second polymer portion.
14. The pattern forming method according to claim 13 , wherein
the widths of each of the plurality of line sections in a central area of the neutralization film are about three times the width of each first polymer portion or each second polymer portion.
15. The pattern forming method according to claim 13 , wherein
the widths of each of the plurality of line sections in a central area of the neutralization film are about five times the width of each first polymer portion or each second polymer portion.
16. The pattern forming method according to claim 13 , wherein both ends of the mask substrate in the direction perpendicular to the line sections include a single first polymer portion adjacent to a central area of the mask substrate, and a single second polymer portion positioned outside of the first polymer portion.
17. The pattern forming method according to claim 13 , wherein
the widths of each of the plurality of line sections in a central area of the neutralization film are about five times the width of each first polymer portion or each second polymer portion.
18. The pattern forming method according to claim 17 , further comprising;
forming a resist pattern corresponding to the plurality of line sections on the neutralization film, and
etching the mask substrate using the resist pattern as a mask to transfer a pattern of the plurality of line sections onto the neutralization film.
19. A pattern forming method, comprising:
forming a base layer on a processing target film;
forming a neutralization film on the base layer;
forming a resist pattern on the neutralization film;
performing an etching process using the resist pattern as a mask to process the neutralization film and form a guide layer having a plurality of line sections parallel to each other;
coating the guide layer with a polymer material containing first polymer segments and second polymer segments;
heating the polymer material to microphase separate the polymer material forming a self-assembly pattern having a plurality of first polymer portions containing the first polymer segment and extending in a direction of the line sections, and a plurality of second polymer portions containing the second polymer segment alternating with the first polymer portions and extending along the direction of the line sections;
forming a resist film to cover the self-assembly pattern;
performing an etching process using the resist film as a mask to remove sides of the self-assembly pattern; and
removing the second polymer portions,
wherein the widths of line sections at both ends of the plurality of line sections of the neutralization film are about two times the width of each first polymer portion or each second polymer portion in a direction perpendicular to the line sections, the neutralization film being neutral with respect to the first polymer segment and the second polymer segment,
an interval between neighboring line sections is an odd multiple of the width of each first polymer portion or each second polymer portion,
the widths of line sections of the plurality of line sections in a central area of the neutralization film other are about three times or about five times the width of each first polymer portion or each second polymer portion, and
on both ends of the plurality of line sections, one first polymer portion and one second polymer portion are formed such that the second polymer portion is positioned outside of the first polymer portion in the direction perpendicular to the line sections.