Semiconductor device having parallel conductive lines including a cut portion and method of manufacturing the same

1. A semiconductor device comprising:

a wiring pattern that includes a plurality of parallel conductive lines that are spaced apart from one another in a first direction and extend in a second direction transverse to the first direction,

wherein the parallel conductive lines includes first and second lines that are adjacent, a third line that is adjacent to the second line, the first and third lines each having a cut portion at different points along the second direction, fourth and fifth lines adjacent to the third line, each having a cut portion that is substantially aligned in the second direction with the cut portion of the third line, and sixth and seventh lines adjacent to the first line, each having a cut portion that is substantially aligned in the second direction with the cut portion of the first line.

2. The semiconductor device according to claim 1 , wherein the parallel conductive lines are evenly spaced.

3. The semiconductor device according to claim 1 , wherein the second line is continuous in the second direction between the point of the cut portion of the first line and the point of the cut portion of the third line.

4. The semiconductor device according to claim 1 , wherein the second line has a first curved portion near the cut portion of the first line and a second curved portion near the cut portion of the third line.

5. The semiconductor device according to claim 4 , wherein the first line has a curved portion that is bent toward the cut portion of the third line, and the third line has curved portion that is bent toward the cut portion of the first line.

6. The semiconductor device according to claim 5 , wherein the sixth line has a wider width portion adjacent the curved portion of the first line, and the fourth line has a wider width portion adjacent the curved portion of the third line.

7. The semiconductor device according to claim 1 , wherein

each of the fourth and sixth lines is connected to a transistor and two lines on both sides thereof are not connected to a fixed potential.

8. A semiconductor device comprising:

a wiring pattern that includes a plurality of parallel conductive lines that are spaced apart from one another in a first direction and extend in a second direction crossing the first direction,

wherein the parallel conductive lines include a first cut portion that separate a first group of three adjacent lines and a second cut portion that separate a second group of three adjacent lines, the first cut portion and the second cut portion being located at different points along the second direction.

9. The semiconductor device according to claim 8 , wherein the parallel conductive lines are evenly spaced.

10. The semiconductor device according to claim 9 , wherein the first group of four adjacent lines is adjacent to the second group of four adjacent lines such that no line is interposed between the two groups.

11. The semiconductor device according to claim 10 , wherein one of the two middle lines in each of the first and second groups is connected to a transistor and the remaining three lines are not connected to a fixed potential.

12. A semiconductor device comprising:

a wiring pattern that includes a plurality of parallel conductive lines that are spaced apart from one another in a first direction and extend in a second direction transverse to the first direction,

wherein the parallel conductive lines includes first and second lines that are adjacent, and a third line that is adjacent to the second line, the first and third lines each having a cut portion at different points along the second direction, and

the second line is continuous in the second direction between the point of the cut portion of the first line and the point of the cut portion of the third line.

13. The semiconductor device according to claim 12 , wherein the parallel conductive lines are evenly spaced.