Forming a VTFT with aligned gate
A method of forming a gate layer of a thin film transistor includes providing a substrate including a gate structure having a reentrant profile. A conformal conductive inorganic thin film is deposited over the gate structure and in the reentrant profile. A photoresist is deposited on the conformal conductive inorganic thin film over the gate structure and filling the reentrant profile. The photoresist is exposed from a side of the photoresist opposite the substrate allowing the photoresist in the reentrant profile to remain unexposed. The conformal conductive inorganic thin film is etched in areas not protected by the photoresist to form a patterned conductive gate layer located in the reentrant profile of the gate structure.
1. A method of forming a gate layer of a thin film transistor comprising:
providing a substrate including a gate structure having a reentrant profile;
depositing a conformal conductive inorganic thin film over the gate structure and in the reentrant profile;
depositing a photoresist on the conformal conductive inorganic thin film over the gate structure and filling the reentrant profile;
exposing the photoresist from a side of the photoresist opposite the substrate allowing the photoresist in the reentrant profile to remain unexposed; and
etching the conformal conductive inorganic thin film in areas not protected by the photoresist to form a patterned conductive gate layer located in the reentrant profile of the gate structure.
2. The method of claim 1 , wherein allowing the photoresist in the reentrant profile to remain unexposed includes providing the gate structure that blocks more than 80% of light at wavelengths less than 400 nanometers.
3. The method of claim 1 , wherein allowing the photoresist in the reentrant profile to remain unexposed includes depositing the conformal conductive inorganic thin film that blocks more than 80% of light at wavelengths less than 400 nanometers.
4. The method of claim 1 , further comprising developing the photoresist after exposing the photoresist and before etching the conformal conductive inorganic thin film.
5. The method of claim 1 , wherein exposing the photoresist includes using a UV light source.
6. The method of claim 1 , wherein exposing the photoresist includes using an oxygen plasma process.
7. The method of claim 1 , wherein exposing the photoresist includes using a low resolution optical mask.
8. The method of claim 1 , wherein providing the substrate includes providing a patterned conductive layer on the substrate prior to providing the gate structure.
9. The method of claim 1 , wherein depositing the conformal conductive thin film includes using an atomic layer deposition process.
10. The method of claim 1 , wherein depositing the photoresist on the conformal conductive inorganic thin film over the gate structure and filling the reentrant profile includes using a coating process.
11. The method of claim 10 , wherein the coating process includes using spin coating, spray coating, curtain coating, slot die coating, gravure printing, screen printing, lamination, or flexography.
12. The method of claim 1 , wherein depositing the photoresist includes drying the photoresist.
13. The method of claim 1 , further comprising depositing another conformal dielectric layer on the cap and the edges of the gate structure prior to depositing the conformal conductive thin film.
14. The method of claim 1 , further comprising treating the exposed photoresist before etching the conformal conductive inorganic thin film.
15. The method of claim 14 , wherein treating the exposed photoresist includes heating the photoresist to cause reflow.
16. The method of claim 1 , further comprising removing photoresist after etching the conformal conductive inorganic thin film.