IP Library Granted Patent US 9,130,579
Granted Patent B2
US 9,130,579 · App. 14/199,305 · Granted Sep 8, 2015

Atomic oscillator and manufacturing method of the atomic oscillator

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Quick Facts
Patent No.
US 9,130,579
App. No.
14/199,305
Granted
Sep 8, 2015
Kind
B2
Abstract

An atomic oscillator includes an atomic cell in which an atom is enclosed, a magnetic field generation part to apply a magnetic field to the atomic cell, a reference oscillator which is controlled based on an atomic resonance signal outputted from the atomic cell and generates a reference signal, and a fractional N-PLL which receives the reference signal to generate a signal including a resonance frequency of the atom, in which when a maximum digit of the resonance frequency adjustable by the magnetic field generation part is a boundary digit, the fractional N-PLL can adjust at least a digit one digit higher than the boundary digit.

Claims (66)

1. An atomic oscillator comprising:

an atomic cell in which an atom is enclosed;

a magnetic field generation part to apply a magnetic field to the atomic cell;

a reference oscillator that is controlled based on an atomic resonance signal outputted from the atomic cell and generates a reference signal; and

a fractional N-PLL that receives the reference signal to generate a signal including a resonance frequency of the atom, wherein

when a maximum digit of the resonance frequency adjustable by the magnetic field generation part is a boundary digit, the fractional N-PLL is operable to adjust the resonance frequency at least a digit that is one digit higher than the boundary digit,

the fractional N-PLL includes an n-bit decimal setting part to determine a decimal part of a frequency division ratio, and

when a bit number of the decimal setting part is n, a phase comparison frequency is f PFD , the resonance frequency is f ΔE , and an adjustable ratio of the magnetic field generation part to the resonance frequeny is R M ,following equation is satisfied

f

PFD

2

n

f

Δ

E

×

R

M

.

2. The atomic oscillator according to claim 1 , wherein the fractional N-PLL includes a decimal setting part of at least 25 bits.

3. The atomic oscillator according to claim 1 , wherein the fractional N-PLL is operable to adjust at least remaining digits of the resonance frequency which are higher than the boundary digit.

4. A manufacturing method of an atomic oscillator including an atomic cell in which an atom is enclosed, a magnetic field generation part as a coil to apply a magnetic field to the atomic cell, a reference oscillator that is controlled based on an atomic resonance signal outputted from the atomic cell and generates a reference signal, and a fractional N-PLL that includes an n-bit decimal setting part to determine a decimal part of a frequency division ratio and receives the reference signal to generate a signal including a resonance frequency of the atom, the method comprising:

determining n of a bit number of the decimal setting part of the fractional N-PLL, wherein when a maximum digit of the resonance frequency adjustable by the magnetic field generation part is a boundary digit, the fractional N-PLL can adjust at least a digit one digit higher than the boundary digit, and when a bit number of the decimal setting part is n, a phase comparison frequency is f PFD , the resonance frequency is f ΔE and an adjustable ratio of the magnetic field generation part to the resonance frequency is R M , following equation is satisfied

f

PFD

2

n

f

Δ

E

×

R

M

.

5. The manufacturing method of the atomic oscillator according to claim 4 , further comprising:

giving an initial value to the n-bit decimal setting part of the fractional N-PLL; and

adjusting the value set in the decimal setting part.

6. The manufacturing method of the atomic oscillator according to claim 4 , further comprising

adjusting the current of the magnetic field generation part.

7. A manufacturing method of an atomic oscillator including an atomic cell in which an atom is enclosed, a magnetic field generation part as a coil to apply a magnetic field to the atomic cell, a reference oscillator that is controlled based on an atomic resonance signal outputted from the atomic cell and generates a reference signal, and a fractional N-PLL that includes an n-bit decimal setting part to determine a decimal part of a frequency division ratio and receives the reference signal to generate a signal including a resonance frequency of the atom, the method comprising:

determining at least one of a number of turns and a current of the magnetic field generation part such that the magnetic field generation part can adjust at least a digit not higher than a boundary digit of the resonance frequency, the boundary digit being a digit one digit lower than a minimum digit of the resonance frequency adjustable by the fractional N-PLL, and when a bit number of the decimal setting part is n, a phase comparison frequency is f PFD , the resonance frequency is f ΔE , and an adjustable ratio of the magnetic field generation part to the resonance frequency is R M , following equation is satisfied

f

PFD

2

n

f

Δ

E

×

R

M

.

8. The manufacturing method of the atomic oscillator according to claim 7 , further comprising:

giving an initial value to the n-bit decimal setting part of the fractional N-PLL; and

adjusting the value set in the decimal setting part.

9. The manufacturing method of the atomic oscillator according to claim 7 , further comprising

adjusting the current of the magnetic field generation part.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 23, 2022
From: SEIKO EPSON CORPORATION
To: MICROCHIP TECHNOLOGY INCORPORATED
Reel/Frame 061301/0770 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 6, 2014
From: MAKI, YOSHIYUKI
To: SEIKO EPSON CORPORATION
Reel/Frame 032368/0372 →