Methods for producing thin film charge selective transport layers

1. A method comprising:

forming a first charge selective transport layer that is electrically coupled to a first conductor layer, wherein the first charge selective transport layer is configured to selectively conduct charge carriers between a semiconductor layer and the first conductor layer; and

forming, above the first charge selective transport layer, the semiconductor layer, wherein the first charge selective transport layer is electrically coupled to the semiconductor layer, and

wherein forming the first charge selective transport layer comprises:

depositing, in an ambient atmosphere, a first precursor solution comprising a first metal-containing reactive precursor material dissolved into a first complexing solvent, wherein molecules of the first complexing solvent are bonded to molecules of the first metal-containing reactive precursor material, preventing the first metal-containing reactive precursor material from reacting with water and oxygen;

evaporating the first complexing solvent, thereby allowing the first metal-containing reactive precursor material to react with at least one of water or oxygen in the ambient atmosphere to form a first film; and

annealing the first film, thereby chemically altering the first film to form the first charge selective transport layer.

2. The method of claim 1 , wherein the first charge selective transport layer is formed on the first conductor layer.

3. The method of claim 1 , wherein the first charge selective transport layer is formed on at least one intervening layer comprising a material that electrically couples the first charge selective transport layer to the first conductor layer.

4. The method of claim 1 , wherein the first film forms an electron transport layer when annealed.

5. The method of claim 1 , wherein the first film forms a hole transport layer when annealed.

6. The method of claim 1 , further comprising:

forming a second charge selective transport layer that is electrically coupled to the semiconductor layer, wherein the second charge selective transport layer is configured to selectively conduct charge carriers between the semiconductor layer and a second conductor layer; and

forming, above the second charge selective transport layer, the second conductor layer, wherein the second charge selective transport layer is electrically coupled to the second conductor layer, and

wherein forming the second charge selective transport layer comprises:

depositing, in the ambient atmosphere, a second precursor solution comprising a second metal-containing reactive precursor material dissolved into a second complexing solvent, wherein molecules of the second complexing solvent are bonded to molecules of the second metal-containing reactive precursor material, preventing the second metal-containing reactive precursor material from reacting with water and oxygen;

evaporating the second complexing solvent, thereby allowing the second metal-containing reactive precursor material to react with at least one of water or oxygen in the ambient atmosphere to form a second film; and

annealing the second film, thereby chemically altering the second film to form the second charge selective transport layer.

7. The method of claim 6 , wherein the first film forms an electron transport layer when annealed, and wherein the second film forms a hole transport layer when annealed.

8. The method of claim 1 , wherein the semiconductor layer comprises an active layer of a heterojunction semiconductor device.

9. The method of claim 1 , wherein the first metal-containing reactive precursor material comprises diethylzinc or dimethylzinc.

10. The method of claim 1 , wherein the first charge selective transport layer comprises a ZnO film or a TiO x film.

11. The method of claim 1 , wherein the first complexing solvent comprises at least one of tetrahydrofuran (THF), diethyl ether, diethylene glycol dimethyl ether (diglyme), pyridine, acetonitrile, or tetramethylethylenediamine.

12. The method of claim 1 , wherein depositing the first precursor solution comprises at least one of: slot-die coating, spin-casting, drop-casting, dip-coating, knife coating, spray-coating, inkjet printing, screen printing, Mayer rod coating, Gravure coating, Flexo printing, or curtain coating.

13. The method of claim 1 , wherein the first conductor layer comprises a transparent conductor material.

14. The method of claim 1 , wherein the first film is annealed at a temperature between about 100 degrees Celsius and about 300 degrees Celsius.

15. The method of claim 1 , wherein the first film is annealed at a temperature between about 100 degrees Celsius and about 120 degrees Celsius.

16. The method of claim 1 , wherein the first metal-containing reactive precursor material comprises molecules having a metal atom, M, that is bonded to one or more species, X, in an M-X bond, such that when the molecules readily react with the at least one of water or oxygen in the ambient environment, the M-X bond is converted to an M-O bond, with O representing an oxygen atom.

17. A method comprising:

forming, on a substrate, a first conductor layer of an inverted architecture organic photovoltaic device, wherein the first conductor layer comprises a transparent conductor material;

forming, an electron transport layer of the inverted architecture organic photovoltaic device that is configured to conduct electrons between an active layer of the inverted architecture organic photovoltaic device and the first conductor layer, wherein the electron transport layer comprises a transparent metal oxide; and

forming, above the electron transport layer, the active layer, wherein the active layer comprises a heterojunction, and

wherein forming the electron transport layer comprises:

dissolving an organometallic precursor compound in a complexing solvent to form a precursor solution, wherein molecules of the complexing solvent are bonded to molecules of the organometallic precursor compound in the precursor solution, preventing the organometallic precursor compound from reacting with water and oxygen;

coating, in an ambient atmosphere, the first conductor layer and a first portion of the substrate with the precursor solution;

evaporating the complexing solvent, thereby allowing the organometallic precursor compound to react with at least one of water or oxygen in the ambient atmosphere to produce a film; and

annealing the film, thereby chemically altering the film to form the electron transport layer.

18. The method of claim 17 , wherein the organometallic precursor compound comprises diethylzinc or dimethylzinc.

19. The method of claim 17 , wherein the complexing solvent comprises at least one of tetrahydrofuran (THF), diethyl ether, diethylene glycol dimethyl ether (diglyme), pyridine, acetonitrile, or tetramethylethylenediamine.

20. The method of claim 17 , wherein the precursor solution is coated under atmospheric conditions using a solution coating method comprising at least one of: slot-die coating, spin-casting, drop-casting, dip-coating, knife coating, spray-coating, ink-jet printing, screen printing, Mayer rod coating, Gravure coating, Flexo printing, or curtain coating.