Active lumped element circulator

1. An integrated circuit comprising:

a first port, a second port, and a third port; and

a plurality of microwave operational amplifiers coupled to each other and the first port, the second port, and the third port;

wherein the plurality of microwave operational amplifiers are arranged to substantially pass a first signal provided to the first port to the second port while substantially isolating the first signal provided to the first port from the third port;

wherein the plurality of microwave operational amplifiers are arranged to substantially pass a second signal provided to the second port to the third port while substantially isolating the second signal provided to the second port from the first port;

wherein the plurality of microwave operational amplifiers are arranged to substantially pass a third signal provided to the third port to the first port while substantially isolating the third signal provided to the third port from the second port; and

wherein the plurality of microwave operational amplifiers each provide a unity gain bandwidth of at least three times a frequency of the first signal provided to the first port.

2. The integrated circuit of claim 1 , wherein the integrated circuit comprises an active isolator.

3. The integrated circuit of claim 1 , wherein the plurality of microwave operational amplifiers each provide a unity gain bandwidth of at least 10 GHz.

4. The integrated circuit of claim 1 , wherein the plurality of microwave operational amplifiers are implemented on a monolithic semiconductor substrate.

5. The integrated circuit of claim 1 , wherein the plurality of microwave operational amplifiers are implemented in silicon germanium.

6. The integrated circuit of claim 1 , wherein the integrated circuit comprises a non-reciprocal device.

7. The integrated circuit of claim 1 , wherein the integrated circuit comprises an active circulator.

8. The integrated circuit of claim 7 , wherein the active circulator is a lumped element integrated circuit active circulator.

9. An integrated circuit comprising:

a semiconductor substrate;

a non-reciprocal device comprising one of an active circulator and an active isolator, wherein the non-reciprocal device is integrated on the semiconductor substrate;

wherein the non-reciprocal device is a lumped element active device, and wherein the non-reciprocal device comprises:

a first port, a second port, and a third port; and

a first microwave operational amplifier, a second microwave operational amplifier, and a third microwave operational amplifier;

wherein the non-reciprocal device is configured to substantially pass a first signal provided to the first port to the second port while substantially isolating the first signal provided to the first port from the third port;

wherein the non-reciprocal device is configured to substantially pass a second signal provided to the second port to the third port while substantially isolating the second signal provided to the second port from the first port;

wherein the non-reciprocal device is configured to substantially pass a third signal provided to the third port to the first port while substantially isolating the third signal provided to the third port from the second port; and

wherein the first, second, and third microwave operational amplifiers each provide a unity gain bandwidth of at least 10 GHz.

10. The integrated circuit of claim 9 , wherein the first, second, and third microwave operational amplifiers each provide a unity gain bandwidth of at least three times a frequency of the first signal provided to the first port.

11. The integrated circuit of claim 9 , wherein the first port is coupled to an input of the first microwave operational amplifier, wherein the second port is coupled to an input of the second microwave operational amplifier, and wherein the third port is coupled to an input of the third microwave operational amplifier.

12. The integrated circuit of claim 9 , wherein the non-reciprocal device is a non-ferrite based active circulator.

13. A radio frequency (RF) electronics system comprising:

a phased array antenna; and

a non-reciprocal device comprising one of an active circulator and an active isolator, wherein the active circulator is a lumped element active circulator and wherein the active isolator is a lumped element active isolator;

wherein the non-reciprocal device is integrated on a monolithic semiconductor substrate and comprises:

a plurality of microwave operational amplifiers; and

a first port, a second port, and a third port, wherein the plurality of microwave operational amplifiers each provide a unity gain bandwidth of at least three times the highest operating frequency of the individual signals provided to one of the first port, the second port and the third port.

14. The RF electronics system of claim 13 , wherein the plurality of microwave operational amplifiers each provide a unity gain bandwidth of at least 10 GHz.

15. The RF electronics system of claim 13 , wherein the plurality of microwave operational amplifiers are implemented in silicon germanium.

16. The RF electronics system of claim 13 ,

wherein the non-reciprocal device is configured to substantially pass a first signal provided to the first port to the second port while substantially isolating the first signal provided to the first port from the third port;

wherein the non-reciprocal device is configured to substantially pass a second signal provided to the second port to the third port while substantially isolating the second signal provided to the second port from the first port; and

wherein the non-reciprocal device is configured to substantially pass a third signal provided to the third port to the first port while substantially isolating the third signal provided to the third port from the second port.