Semiconductor storage device

1. A semiconductor storage device comprising:

(i) a cell array including:

a plurality of resistance change elements formed above a semiconductor substrate,

a plurality of first cell transistors formed on the semiconductor substrate and provided in association with the resistance change elements,

a plurality of first gate electrodes included in the first cell transistors and extending in a first direction,

first bit lines electrically connected to the resistance change elements respectively and extending in a second direction perpendicular to the first direction,

second bit lines electrically connected to one end of a current path of the first cell transistors respectively and extending in the second direction, and

a plurality of first active areas in which the first cell transistors are formed, and which extend in a direction crossing the first direction at a first angle; and

(ii) a bit line controller including:

a plurality of second cell transistors formed on the semiconductor substrate and each having a current path with one end electrically connected to the first bit lines or the second bit lines,

a plurality of second gate electrodes included in the second cell transistors and extending in the first direction, and

a plurality of second active areas in which the second cell transistors are formed, and which extend in a direction crossing the first direction at a second angle.

2. The semiconductor storage device of claim 1 , further comprising a discharge circuit including:

a plurality of third cell transistors formed on the semiconductor substrate, and each having a current path with a first end electrically connected to the first bit lines or the second bit lines, and with a second end electrically connected to a ground potential;

a plurality of third gate electrodes included in the third cell transistors and extending in the first direction; and

a plurality of third active areas in which the third cell transistors are formed, and which extend in a direction crossing the first direction at a third angle.

3. The semiconductor storage device of claim 2 , wherein the first cell transistors, the second cell transistors and the third cell transistors have substantially a same size.

4. The semiconductor storage device of claim 2 , wherein the first angle, the second angle and the third angle are equal.

5. The semiconductor storage device of claim 1 , further comprising a first driver configured to control the first gate electrodes provided near an end portion of the cell array in the first direction.

6. The semiconductor storage device of claim 5 , further comprising a second driver configured to control the second gate electrodes provided near an end portion of the bit line controller in the first direction.

7. The semiconductor storage device of claim 6 , wherein the second driver comprises a same circuit as the first driver.

8. The semiconductor storage device of claim 6 , wherein a length of the bit line controller in the second direction is substantially equal to a length of the second driver in the second direction.

9. The semiconductor storage device of claim 1 , wherein a predetermined number of said second cell transistors have current paths which are electrically connected in parallel, and have gate electrodes to which a same signal is input.

10. The semiconductor storage device of claim 1 , wherein the bit line controller comprises a first bit line controller configured to control a plurality of said first bit lines, and a second bit line controller configured to control a plurality of said second bit lines.

11. A semiconductor storage device comprising a cell array including:

a plurality of resistance change elements formed above a semiconductor substrate;

a plurality of first cell transistors formed on the semiconductor substrate and provided in association with the resistance change elements;

a plurality of first gate electrodes included in the first cell transistor and extending in a first direction;

first bit lines electrically connected to the resistance change elements respectively and extending in a second direction perpendicular to the first direction;

second bit lines electrically connected to one end of a current path of the first cell transistors respectively and extending in the second direction;

a plurality of first active areas in which the first cell transistors are formed, and which are provided under two resistance change elements sandwiching the first gate electrodes in a third direction crossing the first direction; and

a bit line controller including:

a plurality of second cell transistors formed on the semiconductor substrate and each having a current path with one end electrically connected to the first bit lines or the second bit lines;

a plurality of second gate electrodes included in the second cell transistors and extending in the first direction; and

a plurality of second active areas in which the second cell transistors are formed, and which have the same shape as the first active areas.

12. The semiconductor storage device of claim 11 , further comprising a discharge circuit including:

a plurality of third cell transistors formed on the semiconductor substrate, and each having a current path with a first end electrically connected to the first bit lines or the second bit lines, and with a second end electrically connected to a ground potential;

a plurality of third gate electrodes included in the third cell transistors and extending in the first direction; and

a plurality of third active areas in which the third cell transistors are formed, and which have a same shape as the first active areas.

13. The semiconductor storage device of claim 12 , wherein the first cell transistors, the second cell transistors and the third cell transistors have substantially a same size.

14. The semiconductor storage device of claim 12 , further comprising a first driver configured to control the first gate electrodes provided near an end portion of the cell array in the first direction.

15. The semiconductor storage device of claim 14 , further comprising a second driver configured to control the second gate electrodes provided near an end portion of the bit line controller in the first direction.

16. The semiconductor storage device of claim 15 , wherein the second driver comprises a same circuit as the first driver.

17. The semiconductor storage device of claim 15 , wherein a length of the bit line controller in the second direction is substantially equal to a length of the second driver in the second direction.

18. The semiconductor storage device of claim 11 , wherein a predetermined number of said second cell transistors have current paths which are electrically connected in parallel, and have gate electrodes to which a same signal is input.

19. The semiconductor storage device of claim 11 , wherein the bit line controller comprises a first bit line controller configured to control a plurality of said first bit lines, and a second bit line controller configured to control a plurality of said second bit lines.