IP Library Granted Patent US 8,803,261
Granted Patent B2
US 8,803,261 · App. 14/203,131 · Granted Aug 12, 2014

MEMS process and device

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Quick Facts
Patent No.
US 8,803,261
App. No.
14/203,131
Granted
Aug 12, 2014
Kind
B2
Abstract

A method of fabricating a micro-electrical-mechanical system (MEMS) transducer comprises the steps of forming a membrane on a substrate, and forming a back-volume in the substrate. The step of forming a back-volume in the substrate comprises the steps of forming a first back-volume portion and a second back-volume portion, the first back-volume portion being separated from the second back-volume portion by a step in a sidewall of the back-volume. The cross-sectional area of the second back-volume portion can be made greater than the cross-sectional area of the membrane, thereby enabling the back-volume to be increased without being constrained by the cross-sectional area of the membrane. The back-volume may comprise a third back-volume portion. The third back-volume portion enables the effective diameter of the membrane to be formed more accurately.

Claims (41)

1. A micro-electrical-mechanical system (MEMS) capacitive microphone comprising:

a substrate;

a membrane formed relative to a first side of the substrate; and

a back-volume formed in the substrate relative to a second side of the substrate;

wherein the back-volume comprises a first back-volume portion and a second back-volume portion having a boundary therebetween defined by a discontinuity in a sidewall of the substrate; and

wherein the cross sectional area of the second back-volume portion is greater than the cross sectional area of the first back-volume portion.

2. A MEMS capacitive microphone as claimed in claim 1 , wherein the discontinuity comprises a discontinuity in the cross-sectional area of the back volume in a plane parallel to the substrate.

3. A MEMS capacitive microphone as claimed in claim 1 , wherein the discontinuity comprises a discontinuity in a rate of change of cross-sectional area of the back volume in a plane parallel to the substrate with distance from the membrane.

4. A MEMS capacitive microphone as claimed in claim 1 , wherein the discontinuity is curved.

5. A MEMS capacitive microphone as claimed in claim 1 , wherein the discontinuity comprises a change in the gradient of the sidewall.

6. A MEMS capacitive microphone as claimed in claim 1 , wherein the discontinuity comprises two or more changes in the gradient of the sidewall.

7. A MEMS capacitive microphone as claimed in claim 1 , wherein the first back-volume portion has a cross-sectional area that is smaller than the cross-sectional area of the membrane in a plane where the first back-volume portion and the membrane meet.

8. A MEMS capacitive microphone as claimed in claim 1 , wherein the cross-sectional area of the second back-volume portion is greater than the cross-sectional area of the membrane.

9. A MEMS capacitive microphone as claimed in claim 1 , wherein the first back-volume portion has substantially vertical walls.

10. A MEMS capacitive microphone as claimed in claim 1 , wherein the first back-volume portion has sloped walls.

11. A MEMS capacitive microphone as claimed in claim 1 , wherein the second back-volume portion has substantially vertical walls.

12. A MEMS capacitive microphone as claimed in claim 1 , wherein the second back-volume portion has sloped walls.

13. A MEMS capacitive microphone as claimed in claim 1 , wherein the back-volume further comprises a third back-volume portion.

14. A MEMS capacitive microphone as claimed in claim 13 , wherein the third back-volume portion is positioned between the first back-volume portion and the membrane.

15. A MEMS capacitive microphone as claimed in claim 13 , wherein the third back-volume portion has a cross sectional area or diameter that is larger than the cross-sectional area or diameter of the first back-volume portion, but smaller than the cross-sectional area or diameter of the membrane.

16. A MEMS capacitive microphone as claimed in claim 1 , wherein the discontinuity comprises a kink in the sidewall of the back-volume.

17. A MEMS capacitive microphone as claimed in claim 1 , wherein the discontinuity comprises a step in the sidewall of the back-volume.

18. A MEMS capacitive microphone as claimed in claim 17 , wherein the step comprises substantially a right angled step in the sidewall of the back-volume.

19. A MEMS capacitive microphone as claimed in claim 1 , wherein the shape of the second portion of the back-volume is similar in shape to the substrate of the MEMS capacitive microphone.

20. A MEMS capacitive microphone as claimed in claim 19 , wherein the second portion of the back-volume and the substrate are circular in shape, or rectangular in shape, or square in shape.

21. A MEMS capacitive microphone as claimed in claim 1 , wherein the shape of the first portion of the back-volume is similar in shape to the membrane of the MEMS capacitive microphone.

22. A MEMS capacitive microphone as claimed in claim 21 , wherein the first portion of the back volume and the membrane are circular in shape, or rectangular in shape, or square in shape.

23. A MEMS capacitive microphone as claimed in claim 1 , wherein the shape of the first portion of the back-volume is matched to the shape of the membrane and/or wherein the shape of the second portion of the back-volume is matched to the shape of the substrate of the MEMS capacitive microphone.

24. A portable telephone device comprising a micro-electrical-mechanical system (MEMS) capacitive microphone as claimed in claim 1 .

25. A communications device comprising a micro-electrical-mechanical system (MEMS) capacitive microphone as claimed in claim 1 .

26. A computer device comprising a micro-electrical-mechanical system (MEMS) capacitive microphone as claimed in claim 1 .

27. A micro-electrical-mechanical system (MEMS) capacitive microphone comprising:

a substrate;

a membrane formed relative to a first side of the substrate; and

a back-volume comprising means for enabling the effective height of the MEMS capacitive microphone to be reduced for a given volume of back-volume.

28. A micro-electrical-mechanical system (MEMS) capacitive microphone comprising:

a substrate;

a membrane; and

a back-volume,

wherein the back-volume comprises first and second back-volume portions distinguishable by a discontinuity in a sidewall of the back-volume; and

wherein the cross sectional area of the second back-volume portion is greater than the cross sectional area of the first back-volume portion.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 15, 2015
From: CIRRUS LOGIC INTERNATIONAL SEMICONDUCTOR LTD.
To: CIRRUS LOGIC INC.
Reel/Frame 035909/0190 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 2, 2015
From: CIRRUS LOGIC INTERNATIONAL (UK) LTD.
To: CIRRUS LOGIC INTERNATIONAL SEMICONDUCTOR LTD.
Reel/Frame 035806/0389 →
CHANGE OF NAME Recorded Apr 1, 2015
From: WOLFSON MICROELECTRONICS LTD
To: CIRRUS LOGIC INTERNATIONAL (UK) LTD.
Reel/Frame 035353/0413 →
CHANGE OF NAME Recorded Apr 1, 2015
From: WOLFSON MICROELECTRONICS PLC
To: WOLFSON MICROELECTRONICS LTD
Reel/Frame 035356/0096 →