Magnetic memory and method of manufacturing the same
View Patent ↗According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.
1. A magnetic memory comprising:
a conductive layer containing a first metal material;
a stacked body formed above the conductive layer, and comprising a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer formed between the first magnetization film and the second magnetization film; and
an insulating layer formed on a side face of the stacked body, and containing an oxide of the first metal material,
wherein the first magnetization film and/or the second magnetization film includes a first region positioned in a central portion and a second region positioned in an edge portion, the second region containing As, P, Ge, Ga, Sb, In, Ar, He, F, CI, Br, I, Si, B, C, Zr, Tb, S, Se, or Ti.
2. The memory of claim 1 , wherein the first region of the first magnetization film contains CoFeB, and the second region of the first magnetization film further contains CoFeB and O.
3. A magnetic memory comprising:
a conductive layer containing a first metal material;
a stacked body formed above the conductive layer, and comprising a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer formed between the first magnetization film and the second magnetization film; and
an insulating layer formed on a side face of the stacked body, and containing an oxide of the first metal material,
wherein the first magnetization film and/or the second magnetization film includes a first region positioned in a central portion and a second region positioned in an edge portion, the second region containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, CI, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti, and
wherein the second magnetization film comprises a first magnetic layer, a nonmagnetic layer, and a second magnetic layer which are sequentially formed from a side of the tunnel barrier layer.
4. The memory of claim 3 , wherein:
the first region of the second magnetization film contains CoFeB in the first magnetic layer, contains Ta, W, or Hf in the nonmagnetic layer, and contains Pt and Co in the second magnetic layer, and
the second region of the second magnetization film further contains CoFeB and O in the first magnetic layer, further contains Ta, W, or Hf and O in the nonmagnetic layer, and further contains Pt, Co, and 0 in the second magnetic layer.
5. The memory of claim 1 , wherein a standard electrode potential of the first metal material is lower than a standard electrode potential of the second metal material.
6. The memory of claim 5 , wherein the second metal material contains Fe.
7. The memory of claim 6 , wherein the first metal material contains one of Ta, Zn, Cr, Nb, V, Mn, Zr, Pa, Hf, Ti, Al, Be, Sc, Nd, Gd, Tb, lu, and Dv, and an alloy containing not less than two thereof.
8. The memory of claim 1 , wherein the conductive layer is a lower electrode in contact with a semiconductor substrate.
9. The memory of claim 1 , wherein the conductive layer is an underlying layer in contact with the stacked body.