Nonvolatile semiconductor memory device and method of manufacturing the same
View Patent ↗According to one embodiment, a nonvolatile semiconductor memory device includes a magnetoresistive element formed on a semiconductor substrate, a first contact plug which extends through an interlayer dielectric film formed on the semiconductor substrate and immediately below the magnetoresistive element, has a bottom surface in contact with an upper surface of the semiconductor substrate, and is adjacent to the magnetoresistive element, and an insulating film formed between the magnetoresistive element and the first contact plug and on the interlayer dielectric film, wherein the insulating film includes a first region positioned on a side of the interlayer dielectric film, and a second region positioned in the insulating film and on an upper surface of the first region, the insulating film is made of SiN, and the first region is a nitrogen rich film compared to the second region.
1. A nonvolatile semiconductor memory device comprising:
a magnetoresistive element formed on a semiconductor substrate;
a first contact plug which extends through an interlayer dielectric film formed on the semiconductor substrate and immediately below the magnetoresistive element, has a bottom surface in contact with an upper surface of the semiconductor substrate, and is adjacent to the magnetoresistive element; and
an insulating film formed between the magnetoresistive element and the first contact plug and on the interlayer dielectric film,
wherein the insulating film includes a first region positioned on a side of the interlayer dielectric film, and a second region positioned in the insulating film and on an upper surface of the first region,
the insulating film is made of SiN, and
the first region is a nitrogen-rich film compared to the second region.
2. The device according to claim 1 , wherein
the insulating film is further formed along an upper surface and sidewall of the magnetoresistive element, and
a thickness of the insulating film formed on the upper surface is larger than that of the insulating film formed on the sidewall.
3. The device according to claim 1 , wherein
the insulating film is a multilayered film,
the multilayered film includes a first insulating film and a second insulating film formed on the first insulating film,
the first insulating film is formed in the first region, and
the second insulating film is formed in the second region.
4. The device according to claim 1 , wherein
the insulating film is further formed along an upper surface and sidewall of the magnetoresistive element,
the insulating film formed on the sidewall includes a third region having the same conductivity as that of the second region, the first region, and the second region, in an order named from the magnetoresistive element toward an outside,
the first region is a nitrogen-rich film compared to the second region and the third region.
5. The device according to claim 4 , wherein
the insulating film is a multilayered film,
the multilayered film includes a first insulating film, a second insulating film formed on the first insulating film, and a third insulating film formed below the first insulating film,
the first insulating film is formed in the first region,
the second insulating film is formed in the second region, and
the third insulating film is formed in the third region.
6. The device according to claim 3 , wherein the first insulating film has a thickness of 3 to 4 nm.
7. The device according to claim 5 , wherein the third insulating film has a thickness of 1 to 2 nm.
8. The device according to claim 6 , wherein the first insulating film is obtained by performing a plasma nitriding process after a silicon-rich SiN film is deposited.
9. The device according to claim 5 , wherein the first insulating film formed on the sidewall has a dielectric constant higher than those of the second insulating film and the third insulating film.