Optical device and optical module
An optical device includes an active layer disposed over a semiconductor substrate, a diffraction grating disposed over the active layer, a clad layer partly disposed over the diffraction grating, at least one first burying material layer disposed beside side surfaces of end portions of the clad layer over the diffraction grating, and at least one second burying material layer disposed beside side surfaces of a center portion of the clad layer over the diffraction grating. A refractive index of the at least one first burying material layer is different from a refractive index of the at least are second burying material layer.
1. A ridge waveguide optical device comprising:
an active layer formed over a semiconductor substrate;
a diffraction grating formed over the active layer, the diffraction grating being formed by forming an unevenness on a surface of a diffraction grating layer;
a semiconductor burying layer formed on the surface of the diffraction grating layer;
a clad layer formed into the shape of a ridge stripe and formed partially over the diffraction grating;
a first burying material layer formed on the side of the clad layer and over the diffraction grating; and
a second burying material layer formed on the side of the clad layer and over the diffraction grating, the second burying material layer formed in a horizontal direction next to the first burying material layer,
wherein a refractive index of the first burying material layer is different from a refractive index of the second burying material layer,
wherein any one of the first burying material layer and the second burying material layer is made from a material containing TiO2 and the other is made from a material containing MgF2.
2. The optical device according to claim 1 , wherein
the refractive index of the first burying material layer is greater than the refractive index of the second burying material layer.
3. The optical device according to claim 1 , wherein
the refractive index of the first burying material layer is larger than the refractive index of the second burying material layers.
4. The optical device according to claim 1 , further comprising:
an upper electrode formed over the clad layer; and
a lower electrode formed over a back of the semiconductor substrate.
5. The optical device according to claim 1 , wherein
the semiconductor substrate is made from a material containing InP.
6. The optical device according to claim 1 , wherein
the clad layer is made from a material containing InP.
7. The optical device according to claim 1 , wherein
the active layer is made from a material containing GalnAsP or AlGalnAs.
8. An optical device comprising:
a semiconductor substrate including a first region and a second region that is next to the first region in a horizontal direction;
an active layer formed in the first region over the semiconductor substrate;
a guide layer formed in the second region over the semiconductor substrate;
a diffraction grating formed in both the first region and the second region and over the active layer and the guide layer, the diffraction grating being formed by forming an unevenness on a surface of a diffraction grating layer; and
a clad layer formed into the shape of a ridge stripe and formed partially over the diffraction grating,
a first burying material layer formed on the side of the clad layer and over the diffraction grating; and
a second burying material layer formed on the side of the clad layer and over the diffraction grating, the second burying material layer formed in a horizontal direction next to the first burying material layer,
wherein any one of the first burying material layer and the second burying material layer is made from a material containing TiO2 and the other is made from a material containing MgF2.
9. The optical device according to claim 8 , wherein
an equivalent refractive index of the active layer is larger than an equivalent refractive index of the guide layer.
10. The optical device according to claim 8 , wherein
an upper electrode is formed over the clad layer in the first region, and
a lower electrode is formed over the back of the semiconductor substrate.
11. The optical device according to claim 8 , wherein
the guide layer is made from a material containing GaInAsP.
12. An optical module comprising:
a semiconductor laser configured to have a ridge waveguide optical device, the ridge waveguide optical device including
a diffraction grating formed over the active layer, the diffraction grating being formed by forming an unevenness on a surface of a diffraction grating layer;
a semiconductor burying layer formed on the surface of the diffraction grating layer;
a clad layer formed into the shape of a ridge stripe and formed partially over the diffraction grating,
a first burying material layer formed on a side of the clad layer and over the diffraction grating, and
a second burying material layer formed on the side of the clad layer and over the diffraction grating, the second burying material layer being formed in a horizontal direction next to the first burying material layer,
wherein a refractive index of the first burying material layer is different from a refractive index of the second burying material layer,
wherein any one of the first burying material layer and the second burying material layer is made from a material containing TiO2 and the other is made from a material containing MgF2.