IP Library Granted Patent US 9,506,830
Granted Patent B2
US 9,506,830 · App. 14/204,400 · Granted Nov 29, 2016

Pressure sensor

Inventors: Tomohisa Aoyama (Tokyo, JP); Osamu Takatsuki (Tokyo, JP); Motohisa Mukai (Tokyo, JP); Yuichiro Sumiyoshi (Tokyo, JP)
Assignee: FUJIKOKI CORPORATION
G01L19/069G01L19/0046G01L19/0084
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Quick Facts
Patent No.
US 9,506,830
App. No.
14/204,400
Granted
Nov 29, 2016
Kind
B2
Abstract

The invention prevents a pressure receiving space of a pressure sensor from being electrically charged. In a pressure sensor, a diaphragm is attached to a base which is fixed within a cover and a pressure receiving space in which an oil is sealed is formed. A semiconductor type pressure detecting device is connected to a plurality of terminal pins by a bonding wire. A neutralization plate attached to a periphery of the semiconductor type pressure detecting device or a part of the periphery thereof is connected to an earth terminal pin by an earth bonding wire, or is connected to the earth terminal pin by a soldering so as to prevent an insulative medium sealed within the pressure receiving space from being electrically charged.

Claims (27)

1. A pressure sensor comprising:

a diaphragm which receives a pressure of a fluid;

a semiconductor type pressure detecting device which is provided with a plurality of bonding pads including an earth pad;

a base which forms in relation to said diaphragm a pressure receiving space in which an insulative medium is sealed, and is provided within said pressure receiving space with said semiconductor type pressure detecting device; and

a plurality of terminal pins which are implanted in said base and are electrically connected to said semiconductor type pressure detecting device, and one earth terminal pin which is connected to a zero potential of an electric circuit,

wherein a neutralization plate is provided on said base at a peripheral position or a part of the peripheral position of said semiconductor type pressure detecting device,

wherein said neutralization plate is arranged at a position at which a height from said base is the same as or lower than a height of said semiconductor type pressure detecting device from said base, and

wherein said neutralization plate is electrically connected to said earth pad of said semiconductor type pressure detecting device and said earth terminal pin.

2. The pressure sensor according to claim 1 , wherein said neutralization plate is electrically connected to said earth terminal pin by soldering.

3. A pressure sensor comprising:

a diaphragm which receives a pressure of a fluid;

a base which forms in relation to said diaphragm a pressure receiving space in which an insulative medium is sealed, and is provided within said pressure receiving space with a semiconductor type pressure detecting device;

a plurality of terminal pins which are implanted in said base and are connected to said semiconductor type pressure detecting device via a bonding wire, and an earth terminal pin; and

a pressure detecting portion constructed by said diaphragm and said base being integrally equipped with said semiconductor type pressure detecting device,

wherein said semiconductor type pressure detecting device, and a neutralization plate arranged at a peripheral position or a part of the peripheral position of said semiconductor type pressure detecting device are mounted on said base,

wherein said neutralization plate is arranged at a position at which a height from said base is the same as or lower than a height of said semiconductor type pressure detecting device from said base, and

wherein said neutralization plate is electrically conducted with said earth terminal pin via an earth bonding wire.

4. The pressure sensor according to claim 3 , wherein a wire diameter of said earth bonding wire is larger than wire diameters of the other bonding wires.

5. The pressure sensor according to claim 3 , wherein said earth bonding wire is constructed by a plurality of wires.

6. The pressure sensor according to claim 1 , wherein said neutralization plate is formed as a quadrangular shape in its outer shell shape and has a window hole in its center portion.

7. The pressure sensor according to claim 1 , wherein said neutralization plate is formed as an octagonal shape in its outer shell shape and has a window hole in its center portion.

8. The pressure sensor according to claim 1 , wherein said neutralization plate is formed as a circular shape in its outer shell shape and has a window hole in its center portion.

9. The pressure sensor according to claim 1 , wherein said neutralization plate is provided with a slit in its part.

10. The pressure sensor according to claim 3 , wherein said neutralization plate is formed as a quadrangular shape in its outer shell shape and has a window hole in its center portion.

11. The pressure sensor according to claim 3 , wherein said neutralization plate is formed as an octagonal shape in its outer shell shape and has a window hole in its center portion.

12. The pressure sensor according to claim 3 , wherein said neutralization plate is formed as a circular shape in its outer shell shape and has a window hole in its center portion.

13. The pressure sensor according to claim 3 , wherein said neutralization plate is provided with a slit in its part.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 11, 2014
From: AOYAMA, TOMOHISA; TAKATSUKI, OSAMU; MUKAI, MOTOHISA
To: FUJIKOKI CORPORATION
Reel/Frame 032406/0516 →
Priority Claims (2)
JP 2013-050489 · Mar 13, 2013 · national
JP 2013-130154 · Jun 21, 2013 · national
Continuity (1)
Related Publication 20140260648A1 · Sep 18, 2014