Method of fabricating an optoelectronic device with a hollow component in epitaxial layer

1. A method of fabricating an epitaxial device, comprising:

providing a substrate having a first surface and a normal direction;

epitaxially forming a first transition layer in a first temperature on the first surface of the substrate and in-situ incorporating a porogen into the first transition layer;

adjusting the first temperature to a second temperature to burn out the porogen from the first transition layer;

providing an epitaxial layer on the first transition layer; and

removing the substrate from the epitaxial layer, wherein a hollow component is formed inside the first transition layer after burning out the porogen, wherein the porogen is a cyclic structure.

2. The method of fabricating an epitaxial device of claim 1 , wherein the first temperature is lower than the second temperature.

3. The method of fabricating an epitaxial device of claim 1 , wherein the second temperature is 700-900° C.

4. The method of fabricating an epitaxial device of claim 1 , further comprising forming a second transition layer on the first transition layer.

5. The method of fabricating an epitaxial device of claim 1 , wherein the hollow component can be a nano-scale structure and/or an elongated structure having an elongated direction parallel to the normal direction.

6. The method of fabricating an epitaxial device of claim 1 , wherein a plurality hollow component is formed inside the first transition layer and at least two hollow components that can link into a mesh or porous structure and the porosity of the hollow component can be 5-50%.

7. The method of fabricating an epitaxial device of claim 4 , wherein the epitaxial stack comprising a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer formed on the first transition layer and wherein the material of the first conductivity semiconductor layer, the active layer, or the second conductivity semiconductor layer contains at least one element selected from the group consisting of Al, Ga, In, As, P, and N.

8. The method of fabricating an epitaxial device of claim 1 , further comprising forming an inter layer between the first transition layer and the substrate.

9. The method of fabricating an epitaxial device of claim 8 , wherein the inter layer is an unintentional doped layer or an undoped layer.

10. The method of fabricating an epitaxial device of claim 8 , wherein the inter layer is non-single crystalline or single crystalline.

11. The method of fabricating an epitaxial device of claim 1 , wherein the porogen is Bi-Cyclic Tetramethyl Gallium Nitride or Tri-Cyclic Pentamethyl Gallium Nitride.

12. The method of fabricating an epitaxial device of claim 1 , wherein the first transition layer having a first surface and a second surface opposite to the first surface and the second surface is closer to the substrate, and the hollow component inside the first transition layer having an opening on the first surface of the first transition layer.

13. The method of fabricating an epitaxial device of claim 1 , further comprising a step of separating the substrate and the first transition layer.

14. The method of fabricating an epitaxial device of claim 1 , wherein in the step of in-situ incorporating a porogen into the first transition layer the porogen is buried in the first transition layer.