Nonvolatile memory device and method of manufacturing the same

1. A nonvolatile memory device comprising:

a plurality of nonvolatile memory elements each having an upper electrode, a lower electrode, and a variable resistance layer disposed between the lower electrode and the upper electrode, the variable resistance layer having a resistance value that reversibly changes according to an electrical signal applied to the variable resistance layer;

a first insulating layer embedding the plurality of the nonvolatile memory elements, and ranging from a lowermost part of the lower electrode to a position higher than an uppermost part of the upper electrode in each of the nonvolatile memory elements;

a second insulating layer disposed on the first insulating layer, and having an average size of vacancies larger than an average size of vacancies included in the first insulating layer, or having an average carbon concentration higher than an average carbon concentration of the first insulating layer; and

a conductive layer penetrating the second insulating layer and a part of the first insulating layer and being connected to at least one of the upper electrodes of the nonvolatile memory elements.

2. The nonvolatile memory device according to claim 1 , wherein

the first insulating layer is physically in contact with at least one of an upper surface and a side wall of the upper electrode included in each of the nonvolatile memory elements.

3. The nonvolatile memory device according to claim 1 , wherein

a lowermost part of the conductive layer is positioned higher than a lowermost part of the upper electrode included in each of the nonvolatile memory elements.

4. The nonvolatile memory device according to claim 1 , wherein

a width of the conductive layer is larger than a width of an upper surface of the upper electrode connected to the conductive layer, in each of the nonvolatile memory elements, and the conductive layer connected to the upper electrode covers the whole upper surface of the upper electrode.

5. The nonvolatile memory device according to claim 1 , wherein

the conductive layer includes at least one of a line and a via.

6. The nonvolatile memory device according to claim 1 , wherein

the upper electrode included in each of the nonvolatile memory elements contains at least one metal selected from the group consisting of iridium, platinum, gold, silver, and palladium.

7. A nonvolatile memory device comprising:

a plurality of nonvolatile memory elements each having an upper electrode, a lower electrode, and a variable resistance layer disposed between the lower electrode and the upper electrode, the variable resistance layer having a resistance value that reversibly changes according to an electrical signal applied to the variable resistance layer;

a first insulating layer embedding the plurality of the nonvolatile memory elements, and ranging from a lowermost part of the lower electrode to a position higher than an uppermost part of the upper electrode in each of the nonvolatile memory elements;

a second insulating layer a layer disposed on the first insulating layer, and having an average size of vacancies larger than an average size of vacancies included in the first insulating layer, or having an average carbon concentration higher than an average carbon concentration of the first insulating layer;

a conductive layer penetrating the second insulating layer and a part of the first insulating layer and connected to at least one of the upper electrodes of the nonvolatile memory elements; and

a plurality of side wall protective layers each covering a side wall of each of the nonvolatile memory elements as an insulating protective layer, and each covering at least a side surface of the variable resistance layer.

8. The nonvolatile memory device according to claim 7 , wherein

a part of the side wall of the upper electrode not covered with each of the side wall protective layers is covered with at least one of the first insulating layer and the conductive layer.

9. The nonvolatile memory device according to claim 7 , wherein

a lowermost part of the conductive layer is positioned between an uppermost part and a lowermost part of the upper electrode included in the nonvolatile memory element and is in contact with the side wall protective layer.

10. The nonvolatile memory device according to claim 7 , wherein

a lowermost part of the conductive layer is positioned lower than a lowermost part of the upper electrode included in the nonvolatile memory element, and is in contact with the side wall protective layer.

11. The nonvolatile memory device according to claim 7 , wherein

a width of the conductive layer is larger than a width of an upper surface of the upper electrode connected to the conductive layer, in each of the nonvolatile memory elements, and the conductive layer connected to the upper electrode covers the whole upper surface of the upper electrode.

12. The nonvolatile memory device according to claim 7 , wherein

the upper electrode of each of the nonvolatile memory elements contains at least one metal selected from the group consisting of iridium, platinum, gold, silver, and palladium.

13. A method of manufacturing a nonvolatile memory device, the method comprising:

forming a plurality of nonvolatile memory elements each having an upper electrode, a lower electrode, and a variable resistance layer disposed between the lower electrode and the upper electrode, the variable resistance layer having a resistance value that reversibly changes according to an electrical signal applied to the variable resistance layer;

forming a first insulating layer embedding the plurality of nonvolatile memory elements, the first insulating layer ranging from a lowermost part of the lower electrode to a position higher than an uppermost part of the upper electrode in each of the nonvolatile memory elements;

forming, on the first insulating layer, a second insulating layer having an average size of vacancies larger than an average size of vacancies included in the first insulating layer or having an average carbon concentration higher than an average carbon concentration of the first insulating layer; and

forming a conductive layer penetrating the second insulating layer and a part of the first insulating layer, the conductive layer being connected to at least one of the upper electrodes of included in the nonvolatile memory elements.

14. The method of manufacturing a nonvolatile memory device according to claim 13 , wherein

the first insulating layer is physically in contact with at least one of an upper surface and a side wall of the upper electrode of included in each of the nonvolatile memory elements.

15. The method of manufacturing a nonvolatile memory device according to claim 13 , wherein

a lowermost part of the conductive layer is positioned higher than a lowermost part of the upper electrode included in each of the nonvolatile memory elements.

16. The method of manufacturing a nonvolatile memory device according to claim 13 , wherein

a width of the conductive layer is larger than a width of an upper surface of the upper electrode connected to the conductive layer, in each of the nonvolatile memory elements, and the conductive layer connected to the upper electrode covers the whole upper surface of the upper electrode.

17. The method of manufacturing a nonvolatile memory device according to claim 13 , wherein

the conductive layer is at least one of a line and a via.

18. The method of manufacturing a nonvolatile memory device according to claim 13 , wherein

the upper electrode included in each of the nonvolatile memory elements contains at least one metal selected from the group consisting of iridium, platinum, gold, silver, and palladium.