Sapphire Ribbons and Apparatus and Method for Producing a Plurality of Sapphire Ribbons Having Improved Dimensional Stability
The present disclosure is directed to an apparatus and method for forming sapphire ribbons via Edge-Defined Film-Fed Growth (EFG). Further, the present disclosure is directed to a plurality of concurrently grown sapphire ribbons having features such as a low dimensional variability and elimination of voiding between the sapphire ribbons concurrently grown in a batch.
1 . A batch of at least six concurrently EFG grown sapphire ribbons, wherein at least six of the at least six EFG grown sapphire ribbons have a total thickness variation of no greater than 10%.
2 . A batch of at least six concurrently EFG grown sapphire ribbons, wherein at least six of the sapphire ribbons in the batch are essentially free of voids.
3 . The batch of claim 1 , wherein at least six of the sapphire ribbons in the batch have an average width of at least about 101.6 mm.
4 . The batch of claim 1 , wherein at least six of the sapphire ribbons in the batch have an average length of at least about 152.4 mm.
5 . The batch of claim 1 , wherein at least six of the sapphire ribbons in the batch have an average thickness in a range of from about 0.1 mm to about 100 mm.
6 . The batch of claim 1 , wherein at least six of the sapphire ribbons in the batch have a Total Thickness Variation (TTV) of no greater than 2 mm.
7 . The batch of claim 1 , wherein two sapphire ribbons grown from outer dies in the batch have a Total Thickness Variation (TTV) of no greater than 1.2 mm.
8 . The batch of claim 1 , wherein at least six of the sapphire ribbons in the batch have a Total Thickness Variation (TTV) of no greater than 2 mm, and wherein the TTV is determined without including any voids.
9 . The batch of claim 1 , wherein at least six of the sapphire ribbons in the batch have a Total Thickness Variation (TTV) of no greater than 1.2 mm, and wherein the TTV is determined without including any voids.
10 . The batch of claim 1 , wherein the variability of total thickness variation between the total number of concurrently formed ribbons is no greater than about ±50%.
11 . The batch of claim 1 , wherein the variability of total thickness variation between the total number of concurrently formed ribbons is no greater than about ±10%.
12 . The batch of claim 1 , wherein each of the at least six of the at least six EFG grown sapphire ribbons have a total thickness variation of no greater than 5%.
13 . The batch of claim 1 , wherein at least six of the sapphire ribbons in the batch have a maximum low spot thickness of at least about 1 mm.
14 . The batch of claim 1 , wherein at least six of the sapphire ribbons in the batch have a maximum low spot thickness of at least about 0.5 mm.
15 . The batch of claim 1 , wherein the one or more sapphire ribbons in the batch have a C-axis, an A-axis, M-axis or an R-axis orientation substantially perpendicular to the sapphire ribbon's major surface.
16 . The batch of claim 1 , wherein the one or more sapphire ribbons have an A-axis orientation substantially perpendicular to the sapphire ribbon's major surface.
17 . The batch of claim 1 , wherein the batch comprises at least 8 sapphire ribbons.
18 . The batch of claim 1 , wherein the batch comprises at least 10 sapphire ribbons.
19 . A sapphire ribbon grown from an outer die in an EFG growth apparatus configured to simultaneously produce at least six sapphire ribbons, wherein the sapphire ribbon grown from the outer die has a thickness variation within 10% of the average thickness of each inner sapphire ribbon produced simultaneously with the sapphire ribbon grown from the outer die.
20 . The sapphire ribbon of claim 19 , wherein the sapphire ribbon grown from an outer die is essentially free of voids.