IP Library Granted Patent US 9,681,552
Granted Patent B2
US 9,681,552 · App. 14/213,255 · Granted Jun 13, 2017

Fluid oscillations on structured surfaces

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,681,552
App. No.
14/213,255
Granted
Jun 13, 2017
Kind
B2
Abstract

A device comprising a substrate having a surface that comprises a conductive base layer. The device also comprises fluid-support-structures on the conductive base layer. Each of the fluid-support-structures has at least one dimension of about 1 millimeter or less. Each of the fluid-support-structures is coated with an electrical insulator. The device is configured to oscillate a fluid locatable between tops of the fluid-support-structures and the conductive base layer when a voltage is applied between the conductive base layer and the fluid.

Claims (16)

1. A method of manufacturing a device, comprising:

forming a first electrical insulating layer on a substrate;

removing portions of said first electrical insulating layer and portions of said substrate to form a conductive base layer and a plurality of fluid-support-structures, each of said fluid-support-structures having at least one dimension of about 1 millimeter or less and said first electrical insulating layer thereon; and

forming a second electrical insulating layer on sides of said fluid-support-structures, said conductive base layer being substantially devoid of said first and second electrical insulating layers, wherein each of said fluid-support-structures comprises a cell and said at least one dimension is a lateral thickness of a wall of said cell.

2. The method of claim 1 , wherein said removing comprises patterning and etching said substrate comprising silicon and said first electrical insulating layer comprising silicon oxide.

3. The method of claim 1 , wherein forming said first and second electrical insulating layers comprises separate thermal oxidation steps to grow a silicon oxide layer on said fluid-support-structures comprising silicon.

4. The method of claim 1 , wherein forming said second electrical insulating layer comprises removing said second electrical insulating layer from said conductive base layer.

5. The method of claim 1 , wherein forming said conductive base layer further comprises forming a metal silicide layer.

6. The method of claim 1 , further comprising coating said fluid-support-structures and said conductive base layer with a low-surface-energy layer.

7. A method of manufacturing a device, comprising:

forming a first electrical insulating layer on a substrate;

removing portions of said first electrical insulating layer and portions of said substrate to form a conductive base layer and a plurality of fluid-support-structures, each of said fluid-support-structures having at least one dimension of about 1 millimeter or less and said first electrical insulating layer thereon;

forming a second electrical insulating layer on sides of said fluid-support-structures, said conductive base layer being substantially devoid of said first and second electrical insulating layers; and

providing an alternating voltage source configured to oscillate a fluid locatable between tops of said fluid-support-structures and said conductive base layer, wherein said alternating voltage source is connected to apply a voltage between said conductive base layer and said fluid.

8. The method of claim 7 , wherein said alternating voltage source is configured to apply a series of voltage pulses between said conductive base layer and said fluid locatable on said fluid-support-structures, said voltage ranging from about 10 to about 50 volts.

9. The method of claim 7 , wherein said alternating voltage source is configured oscillate said fluid between tops of said fluid-support-structures and said conductive base layer at an oscillation frequency in the range of about 1 to about 100 Hertz.

Assignments (2)
RELEASE OF SECURITY INTEREST Recorded Aug 28, 2014
From: CREDIT SUISSE AG
To: ALCATEL-LUCENT USA INC.
Reel/Frame 033654/0693 →
SECURITY INTEREST Recorded May 7, 2014
From: ALCATEL LUCENT USA, INC.
To: CREDIT SUISSE AG
Reel/Frame 032845/0558 →