Semiconductor nanocrystals, a method for coating semiconductor nanocrystals, and products including same
View Patent ↗A semiconductor nanocrystal that emits green light having a peak emission with a full width at half maximum of about 30 nm or less at 100° C. and a method of making coated semiconductor nanocrystals are provided. Materials and other products including semiconductor nanocrystals described herein and materials and other products including semiconductor nanocrystals prepared by a method described herein are also disclosed.
1. A semiconductor nanocrystal that emits green light having a peak emission with a full width at half maximum of about 30 nm or less at about 25° C. and at about 100° C., wherein the semiconductor nanocrystal has a solid state external quantum efficiency of at least 90% at a temperature of 90° C. or above.
2. A semiconductor nanocrystal in accordance with claim 1 wherein the full width at half maximum at 100° C. is about 25 nm or less.
3. A semiconductor nanocrystal in accordance with claim 1 wherein the semiconductor nanocrystal comprises a core having a first shell over at least a portion of the outer surface of the core and a second shell over at least a portion of the outer surface of the first shell.
4. A semiconductor nanocrystal in accordance with claim 3 wherein the full width at half maximum at 100° C. is about 25 nm or less.
5. A semiconductor nanocrystal in accordance with claim 3 wherein the core comprises a Group IIB element and a Group VI B element.
6. A semiconductor nanocrystal in accordance with claim 3 wherein the core comprises cadmium and selenium.
7. A semiconductor nanocrystal in accordance with claim 3 wherein the first shell comprises a Group IIB element and a Group VIA element.
8. A semiconductor nanocrystal in accordance with claim 3 wherein the first shell comprises a Group IIB element and at least two Group VIA elements.
9. A semiconductor nanocrystal in accordance with claim 3 wherein the first shell comprises zinc, sulfur, and selenium.
10. A semiconductor nanocrystal in accordance with claim 3 wherein the second shell comprises a Group JIB element and a Group VIA element.
11. A semiconductor nanocrystal in accordance with claim 3 wherein the second shell comprises at least two Group IIB elements and a Group VIA element.
12. A semiconductor nanocrystal in accordance with claim 3 wherein the second shell comprises cadmium, zinc, and sulfur.
13. A semiconductor nanocrystal in accordance with claim 1 wherein the semiconductor nanocrystal has a solid state external quantum efficiency of at least 95% at a temperature of 90° C. or above.
14. A semiconductor nanocrystal in accordance with claim 1 wherein the semiconductor nanocrystal has a solid state external quantum efficiency of at least 90% at a temperature of about 100° C.
15. A semiconductor nanocrystal in accordance with claim 14 wherein the semiconductor nanocrystal has a solid state external quantum efficiency of at least 95% at a temperature of about 100° C.
16. A semiconductor nanocrystal in accordance with claim 1 wherein the semiconductor nanocrystal is undoped.
17. A semiconductor nanocrystal in accordance with claim 3 , wherein the core comprises cadmium and selenium, the first shell comprises zinc, sulfur, and selenium, and the second shell comprises cadmium, zinc, and sulfur.
18. A film comprising semiconductor nanocrystals and a host material in which the semiconductor nanocrystals are dispersed, wherein the semiconductor nanocrystals included in the film emit green light having a peak emission with a full width at half maximum of about 30 nm or less when measured at a temperature of about 25° C. and when measured at a temperature of about 100° C.