Method and structure for adding mass with stress isolation to MEMS structures
A method and structure for adding mass with stress isolation to MEMS. The structure has a thickness of silicon material coupled to at least one flexible element. The thickness of silicon material can be configured to move in one or more spatial directions about the flexible element(s) according to a specific embodiment. The apparatus also includes a plurality of recessed regions formed in respective spatial regions of the thickness of silicon material. Additionally, the apparatus includes a glue material within each of the recessed regions and a plug material formed overlying each of the recessed regions.
1. A method for fabricating a MEMS (micro-electro-mechanical-system) structure including a proof mass apparatus, the method comprising:
providing a thickness of silicon material coupled to at least one flexible element, the thickness of silicon material being configured to move in one or more spatial directions about the flexible element(s);
forming one or more stress isolation regions in thickness of silicon material in a vicinity of the flexible element;
forming a plurality of recessed regions in respective spatial regions of the thickness of silicon material adjacent the stress isolation regions;
forming a glue material within each of the recessed regions; and
forming a plug material overlying each of the recessed regions;
wherein a proof mass is configured from at least the plug material provided in each of the plug regions in the thickness of silicon material.
2. The method of claim 1 wherein the plurality of recessed regions are configured as an array.
3. The method of claim 1 wherein each of the recessed regions is characterized by an aspect ratio of greater than five to one.
4. The method of claim 1 wherein the glue material comprises titanium nitride material.
5. The method of claim 1 wherein the glue material includes at least titanium material, platinum material, cobalt material, tantalum material, tungsten material, or nitride material.
6. The method of claim 1 wherein the plug material comprises tungsten material.
7. The method of claim 1 wherein the proof mass is an inertial weight.
8. The method of claim 1 further comprising at least one stress isolation region configured within a vicinity of the flexible element(s).
9. The method of claim 1 wherein the thickness of silicon material and the flexible element(s) are provided on a thickness of silicon material.
10. The method of claim 1 further comprising at least one stress isolation region pattern from at least one portion of the thickness of silicon material.
11. The method of claim 10 wherein the stress isolation region pattern comprises one or more isolation cavity regions.
12. A method for adding mass with stress isolation to a MEMS (micro-electro-mechanical-system) structure, the method comprising:
providing a thickness of silicon material coupled to at least one flexible element, the thickness of silicon material being configured to move in one or more spatial directions about the flexible element(s);
forming one or more stress isolation regions in a vicinity of the flexible element(s);
forming a plurality of recessed regions in respective spatial regions of the thickness of silicon material adjacent to the stress isolation regions;
forming a glue material within one or more of the recessed regions; and
forming a plug material overlying one or more of the recessed regions;
wherein a proof mass is configured from at least the plug material provided in each of the plug regions.
13. The method of claim 12 wherein the stress isolation region comprises one or more isolation cavity regions.
14. A method for adding mass with stress isolation to a MEMS (micro-electro-mechanical-system) structure, the method comprising:
providing a thickness of silicon material coupled to at least one flexible element which is attached to a MEMS structure, the thickness of silicon material being configured to move in one or more spatial directions about the flexible element(s);
forming one or more stress isolation regions in a vicinity of the flexible element(s);
forming a plurality of recessed regions in respective spatial regions of the thickness of silicon material adjacent to the stress isolation regions;
forming a glue material within one or more of the recessed regions; and
forming a plug material overlying one or more of the recessed regions;
wherein a proof mass is configured from at least the plug material provided in each of the plug regions.
15. The method of claim 14 wherein the stress isolation region comprises one or more isolation cavity regions.