Cross-shaped touchscreen pattern

1. A capacitive sensing structure, comprising:

a plurality of first electrically conductive sensor structures electrically coupled to each other in a first direction; and

a plurality of second electrically conductive sensor structures electrically coupled to each other in a second direction; and

wherein each of the first electrically conductive sensor structures and second electrically conductive sensor structures comprise a cross-shaped region; and

wherein the first and second electrically conductive sensor structures cross within the captive sensing structure.

2. The capacitive sensing structure of claim 1 , further comprising a plurality of single electrically conductive structures, each disposed between a pair of adjacent first and second electrically conductive sensor structures.

3. The capacitive sensing structure of claim 2 , wherein the single electrically conductive structures are electrically floating with respect to the plurality of first electrically conductive sensor structures and plurality of second electrically conductive sensor structures.

4. The capacitive sensing structure of claim 2 , wherein one of the single electrically conductive structures is disposed within an open region formed between the pair of adjacent first and second electrically conductive sensor structures.

5. The capacitive sensing structure of claim 2 , wherein at least one of the plurality of first electrically conductive sensor structures, plurality of second electrically conductive sensor structures, and plurality of single electrically conductive structures is comprised of indium tin oxide.

6. The capacitive sensing structure of claim 1 , wherein one or more of the plurality of first electrically conductive sensor structures comprise an opening along a peripheral edge of the first electrically conductive sensor structure.

7. The capacitive sensing structure of claim 1 , wherein one or more of the plurality of second electrically conductive sensor structures comprise an opening along a peripheral edge of the second electrically conductive sensor structure.

8. The capacitive sensing structure of claim 1 , wherein the cross-shaped region comprises a first arm extending along the first direction, and a second arm extending along the second direction and bisecting the first arm to form open regions at least partially defined by the first and second arm.

9. The capacitive sensing structure of claim 1 , wherein the first and second directions are orthogonal.

10. A capacitive sensing structure, comprising:

a plurality of first electrically conductive sensor structures electrically coupled to each other in a first direction, each first electrically conductive sensor structure comprising:

a first arm extending along the first direction, and

a second arm extending along a second direction perpendicular to the first direction and bisecting the first arm to form open regions at least partially defined by the first and second arm; and

a plurality of second electrically conductive sensor structures electrically coupled to each other in the second direction, each second electrically conductive sensor structure comprising:

a third arm extending along the second direction, and

a fourth arm extending along the first direction and bisecting the third arm to form open regions at least partially defined by the third and fourth arm; and

wherein the first and second electrically conductive sensor structures cross within the capacitive sensing structure.

11. The capacitive sensing structure of claim 10 , further comprising a plurality of single electrically conductive structures, each disposed within open regions located between adjacent first and second electrically conductive sensor structures.

12. The capacitive sensing structure of claim 11 , wherein the single electrically conductive structures are electrically floating with respect to the plurality of first electrically conductive sensor structures and plurality of second electrically conductive sensor structures.

13. The capacitive sensing structure of claim 11 , wherein the open regions located between adjacent first and second electrically conductive sensor structures comprise a square-shaped open region, and the single electrically conductive structures disposed within the square-shaped open region located between adjacent first and second electrically conductive sensor structures are square shaped.

14. The capacitive sensing structure of claim 11 , wherein at least one of the plurality of first electrically conductive sensor structures, plurality of second electrically conductive sensor structures, and plurality of single electrically conductive structures is comprised of indium tin oxide.

15. The capacitive sensing structure of claim 10 , wherein one or more of the plurality of first electrically conductive sensor structures comprise an opening along a peripheral edge of the first electrically conductive sensor structure.

16. The capacitive sensing structure of claim 10 , wherein one or more of the plurality of second electrically conductive sensor structures comprise an opening along a peripheral edge of the second electrically conductive sensor structure.

17. A capacitive sensing structure, comprising:

a plurality of transmit electrodes electrically coupled to each other in a first direction, each transmit electrode comprising:

a first arm extending along the first direction, and

a second arm extending along a second direction perpendicular to the first direction and bisecting the first arm to form open regions at least partially defined by the first and second arm; and

a plurality of receive electrodes electrically coupled to each other in the second direction, each receive electrode comprising:

a first arm extending along the second direction, and

a second arm extending along the first direction and bisecting the first arm to form open regions at least partially defined by the first and second arm; and

wherein the transmit and receive electrodes cross within the capacitive sensing structure.

18. The capacitive sensing structure of claim 17 , further comprising a plurality of single electrically conductive structures, each disposed within open regions of adjacent transmit and receive electrodes.

19. The capacitive sensing structure of claim 18 , wherein the single electrically conductive structures are electrically floating with respect to the plurality of transmit electrodes and plurality of receive electrodes.

20. The capacitive sensing structure of claim 18 , wherein the open regions of adjacent transmit and receive electrodes comprise a square-shaped open region, and the single electrically conductive structures disposed within the square-shaped open region formed between adjacent transmit and receive electrodes are square shaped.

21. The capacitive sensing structure of claim 18 , wherein at least one of the plurality of transmit electrodes, plurality of receive electrodes, and plurality of single electrically conductive structures is comprised of indium tin oxide.

22. The capacitive sensing structure of claim 17 , wherein one or more of the plurality of transmit electrodes comprises an opening along a peripheral edge of at least one of the first arm and second arm of the transmit electrode.

23. The capacitive sensing structure of claim 17 , wherein one or more of the plurality of receive electrodes comprises an opening along a peripheral edge of at least one of the first arm and second arm of the receive electrode.