Photovoltaic device including a back contact and method of manufacturing
View Patent ↗A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.
1. A photovoltaic device comprising:
a substrate structure including a base layer, a transparent conductive oxide layer, at least one semiconductor layer; and an electron reflector layer disposed over the substrate structure, wherein the electron reflector layer comprises zinc telluride doped with copper telluride.
2. The photovoltaic device of claim 1 , wherein the zinc telluride is doped with copper telluride at a concentration between 0.01% and 5%.
3. The photovoltaic device of claim 1 , wherein the zinc telluride is doped with copper telluride at a concentration between 2% and 5%.
4. The A photovoltaic device of comprising:
a substrate structure including a base layer, a transparent conductive oxide layer, at least one semiconductor layer; and an electron reflector layer disposed over the substrate structure, wherein the electron reflector layer comprises (Cu 2 ) x Zn (1-x) Te, where x is between 20% and 35%.
5. A photovoltaic device of claim 1 , comprising:
a substrate structure including a base layer, a transparent conductive oxide layer, at least one semiconductor layer; and an electron reflector layer disposed over the substrate structure, wherein the electron reflector layer comprises a bilayer of two sublayers wherein a first sublayer material is chosen from: zinc telluride doped with copper telluride, and zinc telluride-copper telluride alloy; and where the second sublayer material is chosen from: zinc telluride doped with elemental copper, zinc telluride, cadmium zinc telluride, and copper telluride.
6. The photovoltaic device of claim 5 , wherein the first sublayer is zinc telluride doped with copper telluride at a concentration of between 0.01% and 5%; and where the second sublayer is zinc telluride.
7. The photovoltaic device of claim 5 , wherein the first sublayer is zinc telluride alloyed with copper telluride at a concentration of between 5% and 60%; and where the second sublayer is cadmium zinc telluride.
8. The photovoltaic device of claim 1 , wherein the amount of copper telluride dopant in the electron reflector layer increases in a gradient with distance from the semiconductor layer.
9. The photovoltaic device of claim 4 , wherein the amount of Cu 2 Te in the (Cu 2 ) x Zn (1-x) Te alloy in the electron reflector layer increases in a gradient with distance from the semiconductor layer.
10. The photovoltaic device of claim 1 , further comprising an additional electron reflector sublayer comprising cadmium zinc telluride (CZT).
11. The photovoltaic device of claim 4 , further comprising an additional electron reflector sublayer comprising zinc telluride (ZnTe).
12. A process for manufacturing the photovoltaic device of claim 1 , comprising forming the electron reflector layer on the substrate structure by depositing a zinc telluride doped with copper telluride at a concentration of between 0.01% and 5% by one of: (a) a vapor deposition process; or (b) a sputtering process.
13. A process for manufacturing the photovoltaic device of claim 4 , comprising forming the electron reflector layer on the substrate structure by depositing a zinc telluride alloyed with copper telluride at a concentration of between 20% and 35% by one of: (a) a vapor deposition process; or (b) a sputtering process.
14. A process for manufacturing the photovoltaic device of claim 5 , comprising forming the electron reflector layer on the substrate structure by sequentially forming a first sublayer and a second sublayer, wherein forming at least one sublayer is done by one of: (a) a vapor deposition process; or (b) a sputtering process.
15. The process of claim 14 , wherein forming at least one of the first sublayer and the second sublayer is performed by depositing a zinc telluride doped with copper telluride at a concentration of between 0.01% and 5%.
16. The process of claim 14 , wherein forming at least one of the first sublayer and the second sublayer is performed by depositing a zinc telluride alloyed with copper telluride at a concentration of between 5% and 60%.