IP Library Granted Patent US 9,601,768
Granted Patent B2
US 9,601,768 · App. 14/224,955 · Granted Mar 21, 2017

Silicon oxide and method of preparing the same

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Quick Facts
Patent No.
US 9,601,768
App. No.
14/224,955
Granted
Mar 21, 2017
Kind
B2
Abstract

The present invention relates to a method of preparing silicon oxide, in which the amounts of silicon and oxygen are appropriately controlled by decreasing the amount of the oxygen from silicon oxide containing a relatively large amount of oxygen, silicon oxide prepared by the method, and a secondary battery including the same. According to the method of preparing silicon oxide, silicon oxide (first silicon oxide) including a relatively large amount of oxygen is heat treated in a reducing atmosphere to decrease the amount of the oxygen in the silicon oxide (first silicon oxide) and to prepare silicon oxide (second silicon oxide) including silicon and oxygen in an appropriate amount (Si:SiO 2 =1:0.7-0.98), thereby improving capacity and initial efficiency and securing stability and cycle properties (lifetime characteristics) of the secondary battery.

Claims (15)

1. A method of preparing silicon oxide for anode active material, comprising:

providing a first silicon oxide in a reactor in a reaction chamber, and heat treating under a reducing atmosphere to prepare a second silicon oxide,

wherein the first silicon oxide is SiO x (0<x<2), and the second silicon oxide is SiO y , where y<x and 0.7<y<0.98,

wherein the heat treating is performed at a temperature ranging from 800 ° C. to 1,000 ° C. and the temperature is maintained for 10 to 20 hours, and

wherein a crystal size of silicon (Si) in the second silicon oxide is in a range of 0.2 nm to 5 nm.

2. The method of preparing silicon oxide for anode active material of claim 1 , wherein SiO x in the first silicon oxide satisfies 0.9<x<1.5.

3. The method of preparing silicon oxide for anode active material of claim 1 , wherein the reducing atmosphere is created by supplying at least one reducing gas selected from the group consisting of H 2 , NH 3 and CO, or a mixture gas of the reducing gas and an inert gas.

4. The method of preparing silicon oxide for anode active material of claim 3 , wherein the reducing gas or the mixture gas is supplied by a flow rate of 1 sccm to 1,000 sccm.

5. The method of preparing silicon oxide for anode active material of claim 1 , wherein the reducing atmosphere is created by providing at least one material selected from the group consisting of an activated carbon, tantalum and molybdenum in a separate vessel in the reaction chamber.

6. Silicon oxide for anode active material prepared by the method according to claim 1 ,

wherein the silicon oxide is SiO y , where 0.7<y<0.98, and

wherein a crystal size of sillicon (Si) in the silicon oxide is in a range of 0.2 nm to 5 nm.

7. The silicon oxide for anode active material of claim 6 , wherein a full width at half-maximum (FWHM) of the silicon oxide in a range of 25 °<2θ<31 ° in a graph of X-ray diffraction (XRD) analysis using Cu—Kα is in a range of 1.5 ° to 2.5 °.

8. The silicon oxide for anode active material of claim 6 , wherein the silicon oxide has a g value measured by using an electron spin resonance (ESR) spectrometer in a range of 2.0015 to 2.0055.

9. A lithium secondary battery comprising an anode including an anode active material containing the silicon oxide for anode active material according to claim 6 , a cathode, a separator disposed between the anode and the cathode, and an electrolyte.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 4, 2021
From: LG CHEM, LTD.
To: LG ENERGY SOLUTION, LTD.
Reel/Frame 058295/0068 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 25, 2014
From: LIM, BYUNG KYU; JUNG, SANG YUN; PARK, CHEOL HEE; JEONG, HAN NAH; KIM, JE YOUNG; LEE, YONG JU; KIM, HYUN CHUL
To: LG CHEM, LTD.
Reel/Frame 032521/0941 →