Method and system for integrated differential electro-absorption modulator device
View Patent ↗An integrated differential Electro-Absorption Modulator (EAM) device. The device includes a substrate, an electrical driver, and two EAM modules. The electrical driver circuit is configured overlying the substrate member and has one output electrically coupled to the first EAM module and the other output electrically coupled to the second EAM module. The first and second EAM modules have a first and a second output, respectively. A beam splitter can be configured to split an optical input into two optical outputs, each of which can be optically coupled to the optical inputs of the first and second EAM modules.
1. A differential EAM (Electro-Absorption Modulator) device, the device comprising:
a substrate member;
a differential electrical driver circuit configured on a first application-specific integrated circuit (ASIC) overlying the substrate member to provide a first driver output and a second driver output;
a silicon photonics device comprising a first EAM module comprising a first laser at a first wavelength electrically coupled to the differential electrical driver circuit to receive the first driver output, the first EAM module including a first output, a monitor block coupled in series to a transimpedance amplifier (TIA), a minimum detect circuit to derivative block, and a variable bias setting block that is coupled to the differential driver circuit, the first EAM module further comprising a second, redundant laser at the first wavelength and coupled to the differential driver circuit;
a second application-specific integrated circuit (ASIC) coupled to the silicon photonics device through the substrate member;
a second EAM module electrically coupled to the differential electrical driver circuit to receive the second driver output, the second EAM including a second output complementary to the first output;
a common mode termination resistor coupled to the first EAM module and the second EAM module;
a beam splitter module operably splitting a single input signal into a first portion coupled to the first EAM module and a second portion coupled to the second EAM module;
a bias circuit electrically coupled to the first EAM module and the second EAM module; and
a self-test block featuring a broadband source and configured to provide a built-in self-test (BIST) electrical equivalent output to an external spectrum analyzer via a separate high-speed substrate that includes a termination.
2. The device of claim 1 wherein the second output configured as a monitor or is terminated.
3. The device of claim 1 further comprising a common mode voltage node coupled between the first EAM module and the second EAM module, wherein the first EAM module and the second EAM module are configured as a matched pair.
4. The device of claim 3 wherein the first EAM module and the second EAM module are configured with characteristics within a match range of −25% to +25%.
5. The device of claim 1 wherein the first output or the second output is characterized by a frequency range between 10 GHz-50 GHz and a wavelength (λ) range between 1200 nm-1650 nm.
6. The device of claim 1 wherein the first output or the second output is characterized by a data rate of greater than 10 Gbit/s.
7. The device of claim 1 wherein the TIA has a bandwidth of 2f-4f with f being a dither frequency.
8. The device of claim 1 further comprising a bandpass filter.
9. The device of claim 8 wherein the TIA has a bandwidth up to 2f or 4f with f being a dither frequency.
10. The device of claim 9 wherein the bandpass filter is at 2kf with k being a positive integer.
11. A multiple differential EAM (Electro-Absorption Modulator) device, the device comprising:
a substrate member;
at least two differential EAM modules comprising:
a differential electrical driver circuit configured on a first application-specific integrated circuit (ASIC) overlying the substrate member, the differential electrical driver circuit having a first driver output and a second driver output;
a silicon photonics device comprising a first EAM module comprising a first laser at a first wavelength electrically coupled to the first driver output of the differential electrical driver circuit, the first EAM module having a first output, a monitor block coupled in series to a transimpedance amplifier (TIA), a minimum detect circuit to derivative block, and a variable bias setting block that is coupled to the differential driver circuit, the first EAM module further comprising a second, redundant laser at the first wavelength and coupled to the differential driver circuit;
a second application-specific integrated circuit (ASIC) coupled to the silicon photonics device through the substrate member;
a second EAM module electrically coupled to the second driver output of the differential electrical driver circuit, the second EAM module having a second output complementary to the first output;
a common mode termination resistor coupled to the first EAM module and the second EAM module;
a beam splitter module operably splitting a single input signal into a first portion coupled to the first EAM module and a second portion coupled to the second EAM module;
a bias circuit electrically coupled to the first EAM module and the second EAM module; and
a self-test block featuring a broadband source and configured to provide a built-in self-test (BIST) electrical equivalent output to an external spectrum analyzer via a separate high-speed substrate that includes a termination.
12. The device of claim 11 wherein the second output configured as a monitor or is terminated.
13. The device of claim 11 further comprising a common mode voltage node coupled between the first EAM module and the second EAM module, wherein the first EAM module and the second EAM module are configured as a matched pair.
14. The device of claim 13 wherein the first EAM module and the second EAM module are configured with characteristics within a match range of −25% to +25%.
15. The device of claim 11 wherein the first output or the second output is characterized by a frequency range between 10 GHz-50 GH, a wavelength (λ) range between 1200 nm-1650 nm, and a data rate of greater than 10 Gbit/s.
16. The device of claim 15 wherein the first output or the second output of at least one of the differential EAM modules is characterized by a wavelength (λ) range between 1200 nm-1400 nm, and wherein the first output or the second output of at least one of the differential EAM modules is characterized by a wavelength (λ) range between 1500 nm-1650 nm.
17. The device of claim 11 wherein the TIA has a bandwidth of 2f-4f with f being a dither frequency.
18. The device of claim 11 further comprising a bandpass filter.
19. The device of claim 18 wherein the TIA has a bandwidth up to 2f or 4f with f being a dither frequency.
20. The device of claim 19 wherein the bandpass filter is at 2kf with k being a positive integer.