METHOD OF MAKING PHOTOVOLTAIC DEVICE THROUGH TAILORED HEAT TREATMENT
A method of fabricating a photovoltaic device includes a step of forming an absorber layer above a substrate of the photovoltaic device, a step of forming a buffer layer over the absorber layer, and a step of pre-heating the photovoltaic device at a first heating rate to a selected temperature. The first heating rate being higher than 5° C./minute. The method further includes a step of forming a front contact layer over the buffer layer at the selected temperature, after the step of pre-heating the photovoltaic device.
1 . A method of fabricating a photovoltaic device, comprising
forming an absorber layer above a substrate of the photovoltaic device;
forming a buffer layer over the absorber layer;
pre-heating the photovoltaic device at a first heating rate to a selected temperature, the first heating rate being higher than 5° C./minute; and
forming a front contact layer over the buffer layer at the selected temperature, after the step of pre-heating the photovoltaic device.
2 . The method of claim 1 , further comprising:
forming a back contact layer above the substrate before the step of forming the absorber layer.
3 . The method of claim 1 , wherein
the first heating rate is in the range from 5° C./minute to 25° C./minute.
4 . The method of claim 1 , wherein
the first heating rate is in the range from 6° C./minute to 22° C./minute.
5 . The method of claim 1 , wherein
the first heating rate is in the range from 8° C./minute to 11° C./minute.
6 . The method of claim 1 , wherein
the selected temperature is in the range of from 150° C. to 200° C.
7 . The method of claim 1 , wherein
the step of forming the front contact layer is performed through chemical vapor deposition.
8 . The method of claim 1 , wherein
the front contact layer comprises boron doped zinc oxide and is formed through a chemical vapor deposition using a zinc-containing precursor and a boron-containing precursor.
9 . The method of claim 8 , wherein
the zinc-containing precursor comprises diethyl zinc and the boron-containing precursor comprises diborane.
10 . The method of claim 1 , further comprising
applying vacuum to a processing chamber in which the preheating step is performed; and
providing an inert gas into the processing chamber, before the step of preheating the photovoltaic device.
11 . A method of fabricating a photovoltaic device, comprising
forming an absorber layer above a substrate of the photovoltaic device;
forming a buffer layer over the absorber layer;
pre-heating the photovoltaic device to a selected temperature, with a thermal budget less than 150,000 degree*second, where the thermal budget is defined as an integral of temperature with respect to time during the pre-heating; and
forming a front contact layer over the buffer layer at the selected temperature, after the step of pre-heating the photovoltaic device.
12 . The method of claim 11 , wherein
the thermal budget is in the range of from 30,000 degree*second to 150,000 degree*second.
13 . The method of claim 11 , wherein
the thermal budget is in the range of from 35,000 degree*second to 125,000 degree*second.
14 . The method of claim 11 , wherein
the thermal budget is in the range of from 70,000 degree*second to 90,000 degree*second.
15 . The method of claim 11 , wherein
the front contact layer comprises boron doped zinc oxide and is formed through chemical vapor deposition using a zinc-containing precursor and a boron-containing precursor.
16 . The method of claim 15 , wherein
the front contact layer is formed through chemical vapor deposition using diethyl zinc and diborane at a selected temperature in the range of from 160° C. to 180° C.
17 . A method of fabricating a photovoltaic device, comprising
forming a back contact layer above a substrate;
forming an absorber layer above the back contact layer;
forming a buffer layer over the absorber layer;
pre-heating the photovoltaic device to a selected temperature with a thermal budget in the range of from 30,000 degree*second to 150,000 degree*second, the thermal budget defined as an integral of temperature with respect to time during the pre-heating ; and
forming a front contact layer over the buffer layer at the selected temperature, after the step of pre-heating.
18 . The method of claim 17 , wherein
the front contact layer comprises a transparent conductive oxide.
19 . The method of claim 17 , wherein
the front contact layer comprises boron doped zinc oxide and is formed through chemical vapor deposition using diethyl zinc and diborane, and the selected temperature is in a range from 160° C. to 180° C.
20 . The method of claim 17 , further comprising
applying vacuum to a processing chamber in which the pre-heating is performed; and
providing an inert gas into the processing chamber, before the preheating.