Method for manufacturing electronic devices
An embodiment for manufacturing electronic devices is proposed. The embodiment includes the following phases: a) forming a plurality of chips in a semiconductor material wafer including a main surface; each chip includes respective integrated electronic components and respective contact pads facing the main surface; said contact pads are electrically coupled to the integrated electronic components; b) attaching at least one conductive ribbon to at least one contact pad of each chip; c) covering the main surface of the semiconductor material wafer and the at least one conductive ribbon with a layer of plastic material; d) lapping an exposed surface of the layer of plastic material to remove a portion of the plastic material layer at least to uncover portions of the at least one conductive ribbon, and e) sectioning the semiconductor material wafer to separate the chips.
1. A method, comprising:
attaching a conductive ribbon to a first conductive pad that is disposed over a substrate;
forming a layer of packaging material over the ribbon;
removing a portion of the layer to form a first surface of the layer and a second surface of the layer that is approximately orthogonal to the first surface of the layer, the removing the portion of the layer exposing a first contact surface of the ribbon that is approximately coplanar with the first surface of the layer and exposing a second exposed contact surface of the ribbon that is approximately coplanar with the second surface of the layer to form a contact region including the first and second contact surfaces;
wherein attaching the conductive ribbon includes:
attaching a first end of the conductive ribbon to the first pad;
attaching a second end of the conductive ribbon to a second conductive pad that is disposed over the substrate and such that a midsection of the ribbon is farther from the substrate than the first and second ends;
wherein removing the portion of the layer includes removing the portion of the layer to expose the midsection of the ribbon;
removing a portion of the midsection to form the contact region;
cutting through the midsection of the ribbon, the layer of packaging material, and the substrate to form an integrated circuit;
forming a cavity through the contact region; and
forming a conductive T-shaped filler structure in the cavity, the T-shaped filler structure including a vertical portion extending within the cavity and horizontal portions extending on the contact region.
2. The method of claim 1 , wherein forming the cavity through the contract region comprises forming the cavity through cutting or laser ablation of the contact region.
3. The method of claim 1 , wherein forming the conductive T-shaped filler structure in the cavity comprises selectively depositing welding material on the contact region.
4. The method of claim 1 , wherein the vertical portion includes an axis of symmetry and wherein cutting through the midsection of the ribbon, the layer of packaging material, and the substrate to form an integrated circuit comprises cutting through the axis of symmetry of the vertical portion.
5. The method of claim 1 , wherein forming the layer of packaging material over the ribbon comprises forming a layer of plastic material over the ribbon.
6. The method of claim 5 , wherein forming the layer of plastic material over the ribbon comprises injection molding the layer of plastic material on the ribbon and the substrate.
7. A method, comprising:
attaching a conductive ribbon to a first conductive pad that is disposed over a substrate;
forming a layer of packaging material over the ribbon;
removing a portion of the layer to form a first surface of the layer and a second surface of the layer that is approximately orthogonal to the first surface of the layer, the removing the portion of the layer exposing a first contact surface of the ribbon that is approximately coplanar with the first surface of the layer and exposing a second exposed contact surface of the ribbon that is approximately coplanar with the second surface of the layer to form a contact region including the first and second contact surfaces;
wherein attaching the conductive ribbon includes:
attaching a first end of the conductive ribbon to the first conductive pad, and
attaching a second end of the conductive ribbon to a second conductive pad that is disposed over the substrate and such that a midsection of the ribbon is farther from the substrate than the first and second ends;
wherein removing the portion of the layer includes removing the portion of the layer to expose the midsection of the ribbon;
removing a portion of the midsection to form the contact region;
forming a cavity through the contact region and extending into a portion of the packaging material under the contact region but not extending to a surface of the substrate; and
forming a conductive material in the cavity.
8. The method of claim 7 , wherein forming the conductive material in the cavity comprises selectively depositing welding material to form a T-shaped filler structure having a vertical portion extending in the cavity and a horizontal portion on at least a portion of a surface of the contact region.
9. A method for manufacturing electronic devices, comprising:
attaching a plurality of chips to a main surface of a semiconductor material wafer, the semiconductor material wafer including a plurality of contact pads exposed on the main surface and each chip being electrically coupled to at least some of the plurality of contact pads;
attaching a conductive ribbon to at least one contact pad, the conductive ribbon including a first end, a second end, and a midsection portion that is further from the main surface of the semiconductor material wafer than the first and second ends and wherein attaching the at conductive ribbon includes attaching each of the first and seconds ends to at least one of the plurality of contact pads;
forming a layer of packaging material on the conductive ribbon and the main surface of the semiconductor material wafer;
removing a portion of the layer of packaging material to expose the midsection portion of the conductive ribbon;
removing a portion of the midsection portion of the conductive ribbon to form a contact region;
forming a cavity through the contact region and extending into a portion of the packaging material under the contact region but not extending to a surface of the substrate;
forming a conductive T-shaped filler structure in the cavity, the T-shaped filler structure including a vertical portion extending within the cavity and horizontal portions extending on the contact region; and
cutting through the contact region, the T-shaped filler structure, the layer of packaging material, and the semiconductor material wafer to form a plurality of integrated circuits, each integrated circuit including a corresponding one of the plurality of chips.
10. The method of claim 9 , wherein forming the cavity through the contract region comprises forming the cavity through cutting or laser ablation of the contact region.
11. The method of claim 9 , wherein forming the T-shaped filler structure in the cavity comprises selectively depositing welding material on the contact region.
12. The method of claim 9 , wherein forming the conductive T-shaped filler structure comprises forming the vertical portion having an axis of symmetry and wherein cutting through the contact region, the T-shaped filler structure, the layer of packaging material, and the semiconductor material wafer comprises cutting through the axis of symmetry of the vertical portion.
13. The method of claim 9 , wherein forming the layer of packaging material comprises forming a layer of plastic material over the ribbon and the main surface of the semiconductor material wafer.
14. The method of claim 13 , wherein forming the layer of plastic material comprises injection molding the layer of plastic material on the ribbon and the main surface of the semiconductor material wafer.