Passivation composition and its application
A passivation composition and use of the composition in a method of forming a conductive pattern are provided. The passivation composition includes an oxidizing agent, an inorganic base with a general formula M(OH) n and a solvent, wherein M is a metal ion and n is the valence number of the metal ion. The method includes the following steps: (a) forming a polymer conductive layer on a substrate, wherein the polymer conductive layer is consisting of a first area and a second area. The first area is corresponding to a conductive area to be formed; and (b) passivating the second area by using the passivation composition to reduce the conductivity of the second area and form the conductive pattern on the substrate.
1. A method of forming a conductive pattern on a substrate, comprising the following steps:
(a) forming a polymer conductive layer on a substrate, wherein the polymer conductive layer is consisting of a first area and a second area and the first area is corresponding to a conductive pattern to be formed; and
(b) passivating the second area by using a passivation composition to reduce the conductivity of the second area and form the conductive pattern on the substrate,
wherein the passivating process of the step (b) is performed by a soaking method comprising the following steps:
(b-1) applying an anti-passivation film on the first area to cover the first area;
(b-2) soaking the conductive substrate into the passivation composition to perform the passivation process to reduce the conductivity of the second area; and
(b-3) removing the anti-passivation film from the conductive substrate after the passivation process,
wherein the passivation composition comprises an oxidizing agent, an inorganic base having a general formula M(OH) n and a solvent, M is a metal ion and n is the valence number of the metal ion, and
wherein based on the total weight of the passivation composition, the amount of the oxidizing agent ranges from about 5 wt % to about 19.92 wt %, and the amount of the inorganic base ranges from about 0.2 wt % to about 20 wt %.
2. The method of claim 1 , wherein the oxidizing agent is selected from the group consisting of S 2 O 8 2− , ClO − , MnO 4 − , BrO − , Cr 2 O 7 2− , H 2 O 2 , and combinations thereof.
3. The method of claim 2 , wherein the oxidizing agent is S 2 O 8 2− , ClO − , or a combination of S 2 O 8 2− and ClO − .
4. The method of claim 1 , wherein the inorganic base is selected from the group consisting of KOH, NaOH, Ca(OH) 2 , RbOH, Sr(OH) 2 , CsOH, Ba(OH) 2 , and combinations thereof.
5. The method of claim 4 , wherein the inorganic base is KOH, NaOH, or a combination of KOH and NaOH.
6. The method of claim 1 , wherein the solvent is selected from the group consisting of deionized water, methanol, ethanol, propanol,isopropanol, and combinations thereof.